Open AccessDissertation
Oxide-semiconductor-based thin-film electronic devices
TLDR
In this paper, Schottky diodes based on amorphous Indium-Gallium-Zinc-Oxide (IGZO) are fabricated on flexible plastic substrates.Abstract:
Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here, Schottky diodes based on amorphous Indium-Gallium-Zinc-Oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimised flexible diodes to reach 6.3 GHz at zero bias which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and GPS.read more
Citations
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An 80-MOPS-Peak High-Speed and Low-Power-Consumption 16-b Digital Signal Processor
Hideyuki Kabuo,Minoru Okamoto,Isao Tanaka,Hiroyuki Yasoshima,Shinichi Marui,Masayuki Yamasaki,Toshio Sugimura,Katsuhiko Ueda,Toshihiro Ishikawa,Hidetoshi Suzuki,Ryuichi Ashi +10 more
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References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Thermal Agitation of Electric Charge in Conductors
TL;DR: In this article, the electromotive force due to thermal agitation in conductors is calculated by means of principles in thermodynamics and statistical mechanics, and the results obtained agree with results obtained experimentally.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.