Journal ArticleDOI
Oxygen-related SiH IR stretching bands in Fz-Si grown in a hydrogen atmosphere
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TLDR
Three Si-H IR absorption peaks (2191, 2123, 1894 cm −1 ) observed in as-grown and irradiated FZ-Si crystal containing hydrogen are shown experimentally to be oxygen-related as discussed by the authors.Citations
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Hydrogen in crystalline semiconductors
TL;DR: A review of the properties of hydrogen in crystalline semiconductors is presented in this paper, together with the reactions of atomic hydrogen with shallow and deep level impurities that passivate their electrical activity.
Journal ArticleDOI
Unintentional hydrogen incorporation in crystals
TL;DR: In this article, it was shown that during the growth of bulk semiconductors, hydrogen can be unintentionally introduced in noticeable concentrations (≈1016 cm-3), which is the case for floating zone silicon grown under a hydrogen atmosphere and for III-V materials grown by liquid encapsulation Czochralski technique.
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Formation energy of vacancy in silicon determined by a new quenching method
TL;DR: In this paper, the formation energy of vacancies in high-purity silicon was determined by applying a new quenching method, which is based on the quenched temperature dependence of the intensity of the optical absorption peak due to the complexes.
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Passivation of shallow impurities in Si by annealing in H2 at high temperature
TL;DR: In this paper, it was shown that shallow acceptors in Si can be passivated throughout the bulk of a semiconductor sample several mm thick by annealing in H2 at high temperature (≳900°C) and quenching to room temperature.
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Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere
Naoki Fukata,Masashi Suezawa +1 more
TL;DR: In this paper, optical absorption spectra and the annealing behavior of hydrogen point defect complexes in carbon (C)-doped Si after hydrogenation were investigated, and the formation energy of the VH4 defect was estimated to be about 3.2 eV from the quenching temperature dependence of the 2223 cm−1 peak.
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Journal ArticleDOI
Chemical effects on the frequencies of Si-H vibrations in amorphous solids
TL;DR: In this article, it was shown that the frequencies of the bond-stretching vibrations of Si-H groups in amorphous solids vary systematically with the electronegativities of the next nearest neighbor atoms of the network.
Journal ArticleDOI
Bonding and thermal stability of implanted hydrogen in silicon
TL;DR: In this article, the behavior of implanted hydrogen in Si has been investigated by differential infrared transmittance measurements using multiple internal-reflection (MIR) plates, where seven absorption bands between 4.5 and 5.5 µm after implantation with 1016 H+/cm2 at ion energies between 70 and 400 keV.
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Correlation of the SiH stretching frequency with molecular structure
A.L. Smith,N.C. Angelotti +1 more
TL;DR: In this paper, the authors derived a characteristic constant for each substituent group such that the SiH frequency of other substituted silanes and siloxanes can be predicted to an accuracy of ±2 cm −1.
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Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
TL;DR: Based on the quantitative consideration of the chemical effect of nearest neighbor atoms on the bond character and IR vibration frequency of SiH bond in silane molecules, models are proposed for SiH vibration centers and related defect-impurity complexes in crystalline silicon to account for the multiplicity of experimentally observed SiH IR bands in c-Si and their annealing behavior as discussed by the authors.
Journal ArticleDOI
THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES
TL;DR: In this article, the presence of Si-H bonds in hydrogen FZ silicon single crystals was confirmed by measurements of infrared absorption spectrum and three characteristic absorption peaks were found at 4.51, 4.68 and 5.13 μm.