P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors
Sisi Wang,Lei Lu,Jiapeng Li,Zhihe Xia,Hoi Sing Kwok,Man Wong +5 more
- Vol. 50, Iss: 1, pp 1251-1254
Reads0
Chats0
About:
The article was published on 2019-06-01 and is currently open access. It has received 2 citations till now. The article focuses on the topics: Thin-film transistor & Tin oxide.read more
Figures
Figure 3. The average hole concentration (nh), resistivity ( ) and hall mobility ( Hall) of the SnO film, extracted from room temperature Hall-effect measurements. The SnO film was fluorinated for different durations. 
Figure 2. The XRD spectra of the SnO:F and the untreated SnO thin films. 
Figure 1. The cross-section of a bottom-gate SnO TFT.
Citations
More filters
Journal ArticleDOI
Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
TL;DR: In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and highperforming thin-film transistor (TFT) devices in the context of fundamental understanding is presented.
References
More filters
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
p-channel thin-film transistor using p-type oxide semiconductor, SnO
Yoichi Ogo,Hidenori Hiramatsu,Kenji Nomura,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +6 more
TL;DR: In this paper, the authors reported that tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs).
Journal ArticleDOI
Recent Developments in p-Type Oxide Semiconductor Materials and Devices.
TL;DR: P-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market, and recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
Journal ArticleDOI
X-ray photoelectron/Auger electron spectroscopic studies of tin and indium metal foils and oxides
Journal ArticleDOI
Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
Elvira Fortunato,Raquel Barros,Pedro Barquinha,V. Figueiredo,Sang-Hee Ko Park,Chi-Sun Hwang,Rodrigo Martins +6 more
TL;DR: P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x < 2) as a transparent oxide semiconductor have been produced in this paper.