Journal ArticleDOI
Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment
TLDR
In this article, the effect of both surface morphology and wet-chemical pre-treatment on electronic surface and interface properties was investigated for mono- and polycrystalline silicon substrates with special surface structures.About:
This article is published in Applied Surface Science.The article was published on 2008-10-15. It has received 56 citations till now. The article focuses on the topics: Monocrystalline silicon & Passivation.read more
Citations
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BookDOI
Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells
TL;DR: In this paper, a-Si:H/c-Si heterojunction and other high efficiency solar cells: a comparison of rear contact cells are presented. But the authors do not provide a detailed description of the interaction between the two heterojunctions.
Journal ArticleDOI
Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization
TL;DR: In this paper, the performance of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and current understanding of fundamental device physics are presented.
Journal ArticleDOI
IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts
TL;DR: In this article, a carrier-selective passivating contact for poly-crystalline silicon (poly-Si) was proposed for c-Si solar cells based on an interdigitated back contact (IBC) architecture.
Journal ArticleDOI
Mapping active dopants in single silicon nanowires using off-axis electron holography.
Martien Den Hertog,Heinz Schmid,David Cooper,Jean-Luc Rouvière,Mikael Björk,Heike Riel,P. Rivallin,Siegfried Karg,Walter Riess +8 more
TL;DR: State-of-the-art off-axis electron holography can be used to map active dopants in silicon nanowires as thin as 60 nm with 10 nm spatial resolution and offers unique capabilities for a detailed analysis of active dopant concentrations in nanostructures.
Journal ArticleDOI
Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD
Delfina Muñoz,P. Carreras,J. Escarré,D. Ibarz,S. Martín de Nicolás,Cristobal Voz,José Miguel Asensi,Joan Bertomeu +7 more
TL;DR: In this paper, the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured Wafers was studied.
References
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Journal ArticleDOI
The Evolution of Silicon Wafer Cleaning Technology
TL;DR: In this article, the evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989, from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles.
Journal ArticleDOI
Surface passivation of crystalline silicon solar cells: a review
TL;DR: A review of surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells is presented in this paper, where a p-n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride are presented.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopy
M. Grundner,H. Jacob +1 more
TL;DR: In this paper, surface spectroscopy measurements of silicon single-crystal wafers which have been treated in order to obtain hydrophilic and hydrophobic surfaces, respectively, were reported.
Journal ArticleDOI
Dependence of thin-oxide films quality on surface microroughness
TL;DR: In this article, the effects of silicon surface microroughness on electrical properties of thin-oxide films, such as breakdown electric field intensity (E/sub BD/) and time-dependent dielectric breakdown (Q/subBD/), have been studied, where the MICROUGE of silicon and silicon dioxide surfaces are evaluated by the scanning tunneling microscope (STM) and the atomic force microscope (AFM), respectively.
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