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Journal ArticleDOI

Picosecond microwave pulse generation

Gerard Mourou, +2 more
- 15 Mar 1981 - 
- Vol. 38, Iss: 6, pp 470-472
TLDR
In this paper, a laser-activated photoconductive switch was used to generate X-band microwave pulses and these pulses were used to observe the microwave reflection from optically excited germanium.
Abstract
Picosecond duration X‐band microwave pulses have been generated using a laser‐activated photoconductive switch. These pulses have been used to observe the microwave reflection from optically excited germanium. The reflection measurements indicate that the microwave pulse has a full width at half‐maximum of 50 ps and is synchronized with picosecond precision to the laser pulse. A high‐resolution radar experiment is also reported.

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Citations
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Journal ArticleDOI

Terahertz optical rectification from 〈110〉 zinc‐blende crystals

TL;DR: In this article, the authors report the study of optically induced terahertz (THz) electromagnetic radiation from 〈110〉 oriented zinc-blende crystals and show that second-order optical rectification is the major nonlinear process that generates THz radiation.
Journal ArticleDOI

Characterization of ultrashort electromagnetic pulses

TL;DR: In this paper, a review of advances made in the latter field over this period, indicating the general principles involved, how these have been implemented in various experimental approaches, and how the most popular methods encode the temporal electric field of a short optical pulse in the measured signal and extract the field from the data.
Journal ArticleDOI

Active Control of the Dynamics of Atoms and Molecules

TL;DR: Experimental progress in controlling the population of specific quantum states, in manipulating the dynamics of bound wave packets, and in the control of chemical reactions are reviewed, and current problems in the field are summarized.
Journal ArticleDOI

Generation of high-power sub-single-cycle 500-fs electromagnetic pulses.

TL;DR: The pulse energy of the far-infrared radiation is found to be a quadratic function of bias field and a nonmonotonic function of laser intensity.
Journal ArticleDOI

Terahertz optical rectification from a nonlinear organic crystal

TL;DR: In this article, optical rectification and subsequent generation of sub-picosecond sub-millimeter-wave radiation from a nonlinear organic crystalline salt was reported, and the magnitude of the rectified field from the organic salt dimethyl amino 4-N-methylstilbazolium tosylate is one and two orders of magnitude larger than that from GaAs and LiTaO3, respectively.
References
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Journal ArticleDOI

Picosecond optoelectronic switching and gating in silicon

TL;DR: In this paper, the authors measured the switching speed of two transmission gates in tandem, each having an aperture time of 15 psec, by correlating the response of two transceivers in tandem.
Journal ArticleDOI

Picosecond optoelectronic switching in GaAs

Chi H. Lee
TL;DR: In this article, the effect of the Ridley-Watkins-Hilsum mechanism on the performance of a GaAs slab in a charged line pulser was discussed. But the effect was not discussed.
Journal ArticleDOI

Optical control of millimeter-wave propagation in dielectric waveguides

TL;DR: In this article, a new method for controlling millimeter-wave propagation in semiconductor waveguides-optical control was demonstrated, and phase shifts as high as 300°/cm at 94 GHz were observed accompanied by less than 1 dB insertion loss.
Journal ArticleDOI

High‐power switching with picosecond precision

TL;DR: In this article, the authors show that in spite of the thermal instability shortcoming experienced in Si, quasi-dc bias operation can be utilized in a manner which relaxes stringent synchronization requirements.
Journal ArticleDOI

Microwave switching by picosecond photoconductivity

TL;DR: In this paper, the authors proposed a short-cycle microwave and millimeter-wave switching scheme using a few microjoules of optical energy, which was demonstrated with switching experiments at 1 GHz and 10 GHz, and the results with reference to the physical properties of the high-density plasma responsible for the switching.
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