Journal ArticleDOI
Plasma deposition of GaP and GaN
J. C. Knights,R. A. Lujan +1 more
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In this paper, the preparation of thin films of gallium phosphide and gallium nitride by deposition from low pressure rf-excited plasmas in mixtures of trimethyl gallium with ammonia and phosphine, respectively, is described.Abstract:
We report the preparation of thin films of gallium phosphide and gallium nitride by deposition from low‐pressure rf‐excited plasmas in mixtures of trimethylgallium with ammonia and phosphine, respectively. With the deposition conditions used, the gallium phosphide is found to be amorphous, while the gallium nitride is polycrystalline. We present preliminary measurements of optical and electrical properties.read more
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Progress and prospects of group-III nitride semiconductors
S.N Mohammad,Hadis Morkoç +1 more
TL;DR: In this paper, the authors review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them, focusing on the current status of wide bandgap gallium nitride, and related semiconductors from both the materials and devices points of view.
Journal ArticleDOI
Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
TL;DR: In this paper, a combination of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction and cross-sectional transmission electron microscopy was used to determine the film/substrate epitaxial relationships.
Journal ArticleDOI
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
TL;DR: In this article, GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma assisted molecular beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is growing at higher temperatures.
Journal ArticleDOI
Growth of GaN by ECR-assisted MBE
TL;DR: In this article, a GaN-buffer was grown at low temperature and then the rest of the GaN films were grown at higher temperatures, leading to a relatively small two-dimensional nucleation rate (∼20 nuclei/μm2 h) and high lateral growth rate (100 times faster than the vertical growth rate).
Journal ArticleDOI
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
Robert F. Davis,Zlatko Sitar,B.E. Williams,H. S. Kong,H. J. Kim,John W. Palmour,John A. Edmond,J. Ryu,Jeffrey T. Glass,C. H. Carter +9 more
TL;DR: In this paper, it was shown that monocrystalline diamond and silicon carbide can be achieved at or below 1 atm total pressure and at a temperature T, which is the highest operating temperature ever achieved for a field effect device.
References
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Journal ArticleDOI
Amorphous silicon solar cell
D. E. Carlson,C R M Wronski +1 more
TL;DR: In this article, thin film solar cells, ∼ 1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane, and the cells were made in a p i n structure by using doping gases in the discharge.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium
Journal ArticleDOI
Quantitative analysis of hydrogen in glow discharge amorphous silicon
TL;DR: In this paper, the hydrogen concentrations and densities of amorphous silicon films prepared from glow discharge plasmas of silane were measured by counting the emitted γ rays.
Journal ArticleDOI
Photoconductivity and absorption in amorphous Si
TL;DR: In this paper, the photoconductivity and absorption of Si specimens were measured at room temperature as a function of photon energy and Td in a spectral range from 0.5 eV to 3 eV and the absorption coefficient was determined for evaporated, sputtered and glow discharge specimens.
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