Journal ArticleDOI
Quantum transport modeling of resonant-tunneling devices
TLDR
In this article, a form of quantum transport theory has been developed to model the resonant-tunneling diode and similar devices in which quantum interference effects play a significant role, and the internal state of the devices is represented by the Wigner distribution function, with boundary conditions which model the effects of the electrical contacts to the device.Abstract:
A form of quantum transport theory has been developed to model the resonant-tunneling diode and similar devices in which quantum interference effects play a significant role. The internal state of the devices is represented by the Wigner distribution function, with boundary conditions which model the effects of the electrical contacts to the device. Inelastic scattering processes are approximated by a classical Boltzmann collision operator, and the effects of different scattering processes on the device characteristics are evaluated numerically.read more
Citations
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Journal ArticleDOI
The Wigner-function approach to non-equilibrium electron transport
Carlo Jacoboni,Paolo Bordone +1 more
TL;DR: The Wigner-function approach to quantum electron transport in semiconductors is reviewed in this article, with a discussion of the various forms of the dynamical equations that govern its evolution.
Journal ArticleDOI
Simulation of quantum transport in quantum devices with spatially varying effective mass
TL;DR: In this article, an exact nonlocal formulation in the Wigner representation due to a spatially varying effective mass and its discretization for numerical calculation is discussed, and the current-voltage characteristics of resonant tunneling diodes are simulated to verify the validity of such a formulation.
Journal ArticleDOI
Numerical simulation of field emission and tunneling: A comparison of the Wigner function and transmission coefficient approaches
Kevin L. Jensen,A. K. Ganguly +1 more
TL;DR: In this paper, the authors compared the performance of the Wigner distribution function (WDF) and the Airy function (AFC) for quantifying field emission from a material into the vacuum.
Journal ArticleDOI
The methodology of simulating particle trajectories through tunneling structures using a Wigner distribution approach
Kevin L. Jensen,F. A. Buot +1 more
TL;DR: In this paper, a trajectory methodology for constructing quantum particle trajectories is presented and their behavior, as a function of scattering and self-consistency, is shown to be consistent with the steady-state currentvoltage/quantum well electron density characteristics of the resonant tunneling diode (RTD).
Journal ArticleDOI
Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios
R.K. Mains,George I. Haddad +1 more
TL;DR: In this paper, Wigner function simulations of structures with experimentally observed high peak-to-valley ratios are carried out and it is shown that if care is taken with the numerical method used, the simulations reproduce these sharp resonances.
References
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Journal ArticleDOI
On the Quantum Correction For Thermodynamic Equilibrium
TL;DR: In this article, the Boltzmann formula for the probability of a configuration is given in classical theory by means of a probability function, and the result discussed is developed for the correction term.
Book ChapterDOI
On the quantum correction for thermodynamic equilibrium
TL;DR: In this article, the Boltzmann formula for lower temperatures has been developed for a correction term, which can be developed into a power series of h. The formula is developed for this correction by means of a probability function and the result discussed.
Journal ArticleDOI
Path integral approach to quantum Brownian motion
TL;DR: In this paper, the authors apply the influence-functional method of Feynman and Vernon to the study of Brownian motion at arbitrary temperature and obtain an explicit expression for the time evolution of the complete density matrix ϱ(x, x, x′, t) when the system starts in a particular kind of pure state.
Journal ArticleDOI
Resonant tunneling in semiconductor double barriers
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.