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Quantum wires, quantum boxes and related structures: Physics, device potentials and structural requirements
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TLDR
In this paper, the advantages of using quantum wires and quantum box structures as optoelectronic materials are discussed. And the structural requirements to obtain these desirable properties are clarified, and the advantage and limitation of gate-controlled planar superlattices and other quantum interference devices are examined.Citations
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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
TL;DR: In this article, the optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described, and the saturated modal gain for this novel laser active region is found to be 9-10 cm/sup -1/ in the ground state.
Journal ArticleDOI
Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
Go Yusa,Hiroyuki Sakaki +1 more
TL;DR: In this article, the trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures.
Journal ArticleDOI
Mesoscopic physics and nanoelectronics: nanoscience and nanotechnology
TL;DR: In this article, a review of the exciting field and challenging areas of research in mesoscopic physics and nanoelectronics is given, with time-independent S-matrix theory applied to mesoscopic systems and double-time-axis time-dependent S -matrix thoory, coupled with the lattice Weyl-Wigner formulation of quantum dynamics of electrons in solids.
Journal ArticleDOI
Electrochemically assembled quasi-periodic quantum dot arrays
Supriyo Bandyopadhyay,A.E. Miller,Hsueh-Chia Chang,G. Banerjee,Vadim V. Yuzhakov,D.F. Yue,Richard E. Ricker,S. Jones,Jeffrey A. Eastman,E. Baugher,Meera Chandrasekhar +10 more
TL;DR: In this paper, two electrochemical self-assembly processes for producing highly ordered quasi-periodic arrays of quantum dots on a surface were described and compared with conventional nanosynthesis.
Journal ArticleDOI
Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
Shyun Koshiba,H. Noge,Hidefumi Akiyama,Takeshi Inoshita,Yusuke Nakamura,Akira Shimizu,Yasushi Nagamune,Masahiro Tsuchiya,Hideaki Kano,Hiroyuki Sakaki,Kazumi Wada +10 more
TL;DR: A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top as mentioned in this paper.
References
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Journal ArticleDOI
Multidimensional quantum well laser and temperature dependence of its threshold current
Yasuhiko Arakawa,H. Sakaki +1 more
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
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Gain and the threshold of three-dimensional quantum-box lasers
TL;DR: In this article, the electronic dipole moment and its polarization dependence are analyzed, and it is shown that the gain becomes maximum when the electric field of light is parallel to the longest side of the quantum box.
Journal ArticleDOI
Intrinsic mechanism for the poor luminescence properties of quantum-box systems
TL;DR: It is proposed that electrons captured from the barriers in the upper levels of quantum boxes are retained in their cascade to the fundamental states for more than nanoseconds, and no luminescence can be obtained from these stored electrons with reasonable assumptions for the hole population.
Journal ArticleDOI
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
TL;DR: In this paper, the transport properties of electrons confined in ultrafine wire structures are studied theoretically and the scattering probability of such size-quantized electrons is calculated for Coulomb potential and is shown to be suppressed drastically because of the one-dimensional nature of the electronic motion in the wire.
Journal ArticleDOI
Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
TL;DR: In this paper, hyperfine control of the interface structure and composition between GaAs and AlAs films grown by molecular beam epitaxy has been achieved by deposition on vicinal (100) GaAs substrates.
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Multidimensional quantum well laser and temperature dependence of its threshold current
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