Journal ArticleDOI
Radiation degradation of large fluence irradiated space silicon solar cells
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In this article, the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 1013 p/cm2 and irradiated by 1 MeV electrons with an anomalous degradation which was found in these large-fluence regions.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 1998-01-01. It has received 21 citations till now. The article focuses on the topics: Fluence & Irradiation.read more
Citations
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Journal ArticleDOI
Proton Radiation Hardness of Perovskite Tandem Photovoltaics
Felix Lang,Marko Jošt,Kyle Frohna,Eike Köhnen,Amran Al-Ashouri,Alan R. Bowman,Tobias Bertram,Anna Belen Morales-Vilches,Dibyashree Koushik,Elizabeth M. Tennyson,Krzysztof Galkowski,Krzysztof Galkowski,Giovanni Landi,Mariadriana Creatore,Bernd Stannowski,Christian A. Kaufmann,Jürgen Bundesmann,Jörg Rappich,Bernd Rech,Bernd Rech,Andrea Denker,Andrea Denker,Steve Albrecht,Steve Albrecht,Heinz-Christoph Neitzert,Norbert H. Nickel,Samuel D. Stranks +26 more
TL;DR: Tailored operando and ex situ measurements are designed to show that perovskite/CIGS cells retain over 85% of their initial efficiency even after 68 MeV proton irradiation at a dose of 2 × 1012 p+/cm2.
Journal ArticleDOI
Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons
TL;DR: In this article, the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer was found to be reduced by irradiation with 4.6 MeV electrons, while the unknown defect density remained unchanged.
Journal ArticleDOI
Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm−2 fluence irradiation of 1 MeV electrons
Hideharu Matsuura,Yoshitsugu Uchida,Naoto Nagai,Tadashi Hisamatsu,Takashi Aburaya,Sumio Matsuda +5 more
TL;DR: In this paper, the conduction type of boron (B)-doped silicon (Si) changes from p type into n type by the 1×1017 cm−2 fluence irradiation (high-fluence irradiation) of 1 MeV electrons.
Journal ArticleDOI
Mechanism for the anomalous degradation of silicon space solar cells
TL;DR: In this paper, the anomalous increase and abrupt decrease of short-circuit current are caused by corresponding changes of the minority carrier lifetime and a conversion of conductivity type and the majority density decreases abruptly due to trapping by the radiation-induced deep donors.
Journal ArticleDOI
Modeling the effect of 1 MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells
TL;DR: In this paper, the effect of irradiation on the solar cell was simulated by a set of defects of which the energy levels lie deep in energy gap of silicon (much larger than the characteristic thermal energy kT far from either the conduction or valence band).
References
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Journal ArticleDOI
Semiconductors and Semimetals, Vol. 11: Solar Cells
H. J. Hovel,B. O. Seraphin +1 more
Journal ArticleDOI
Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
TL;DR: In this paper, an anomalous increase in the short-circuit current Isc of n-on-p Si space solar cells, followed by an abrupt decrease in Isc and cell failure has been observed under high fluence (≳1016 cm −2) 1 MeV electron irradiation.
Journal ArticleDOI
Analysis of radiation damage to Si solar cells under high-fluence electron irradiation
Masafumi Yamaguchi,Stephen J. Taylor,Ming-Ju Yang,Sumio Matsuda,Osamu Kawasaki,Tadashi Hisamatsu +5 more
TL;DR: In this article, a model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority carrier lifetime reduction with irradiation.