Journal ArticleDOI
Recombination, gain and bandwidth characteristics of 1.3-µm semiconductor laser amplifiers
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TLDR
In this paper, the influence of spontaneous recombination mechanism and the temperature and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed.Abstract:
The influence of the spontaneous recombination mechanism and the temperature- and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed. Measurements of signal gain are presented. Frequency detuning and optical bandwidth characteristics are discussed. By considering the trade-off between optical bandwidth and resonant signal gain, guidelines for the requirements to the facet reflectivity are given.read more
Citations
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Journal ArticleDOI
Semiconductor laser optical amplifiers for use in future fiber systems
TL;DR: In this article, the application of semiconductor laser amplifiers to long-wavelength optical fiber systems is discussed and the basic equations defining laser amplifier characteristics are presented together with experimental results.
Journal ArticleDOI
Wavelength conversion using semiconductor optical amplifiers
TL;DR: In this article, a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model is presented.
Journal ArticleDOI
Recent progress in semiconductor laser amplifiers
Tadashi Saitoh,Takaaki Mukai +1 more
TL;DR: In this article, a GaInAsP traveling-wave semiconductor laser amplifiers (TWAs) for use in optical fiber transmission systems is discussed and the status of antireflection coating on laser-diode facets which are indispensable for TWAs is discussed.
Journal ArticleDOI
Measurement of carrier lifetime and linewidth enhancement factor for 1.5- mu m ridge-waveguide laser amplifier
TL;DR: In this paper, the linewidth enhancement factor was measured with a simple dynamic self-heterodyne method and the carrier lifetime was investigated with a SOA without antireflection coating.
Journal ArticleDOI
GaInAsP semiconductor laser amplifiers for single-mode fiber communications
TL;DR: In this article, a theoretical model is presented concerning the influence of the waveguide structure on the maximum internal gain of a CW-operating 1.5-μm BH amplifier, including thermal effects.
References
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Journal ArticleDOI
Theory of the linewidth of semiconductor lasers
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
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Calculated spectral dependence of gain in excited GaAs
TL;DR: In this article, the calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The qualitative behavior of the results is in agreement with experiment.
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Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
TL;DR: In this article, a small signal method is used to measure the carrier lifetime as a function of injected carrier density, and the results are used to determine the radiative and nonradiative recombination rates for AlGaAs LED's and 1.3 μm InGaAsP lasers.
Analysis of semiconductor laser optical amplifiers
TL;DR: In this article, a new analytical model for semiconductor laser amplifiers is presented, which has the virtue of avoiding excessive numerical computation and yet retaining sufficient accuracy for most cases of interest.
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Computer model of an injection laser amplifier
TL;DR: In this article, the authors proposed a model based on numerical solutions of traveling-wave equations, where the noise output of the laser amplifier is treated by traveling-Wave power equations, but the light signal is described by travelingwave equations for its amplitude.