Journal ArticleDOI
Resistivity and Temperature Coefficient of Thin Metal Films with Rough Surface
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In this paper, the surface roughness of thin metal films has been used to predict the thickness dependence of resistivity and its temperature coefficient of metal films, and the ratio of the roughness to the mean free path, h/λ, is introduced as a convenient parameter.Abstract:
The thickness dependence of resistivity and its temperature coefficient of thin metal films has been studied. A theory is proposed to include, the surface roughness in determining the film resistivity, in addition to the reduced mean free path to conduction electrons. The ratio of the roughness to the mean free path, h/λ, is introduced as a convenient parameter. The thickness dependence of the resistivity predicted by the present theory agrees with the well known Fuchs-Sondheimer theory if h/λ=0. If h/λ>0, the discrepancy between the two theories increases with the decrease in film thickness. Satisfactory agreement between the theoretical and experimental results can be obtained by adjusting the value of h/λ.read more
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Transparent conductive electrodes for electrochromic devices: A review
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Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films
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Resistivity of thin Cu films with surface roughness
TL;DR: In this article, an atomistic first-principles calculation of resistivity induced by atomically rough surfaces of thin Cu films is presented, which shows that the resistivity increases significantly due to surface roughness scattering and it is quite sensitive to both the amount and the nature of roughness.
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A theoretical description of grain boundary electron scattering by an effective mean free path
TL;DR: A mathematical analysis based on the Mayadas-Shatzkes model indicates that an effective mean free path may be defined in order to describe electronic conduction in both thin polycrystalline and monocrystalline metallic films as discussed by the authors.