Journal ArticleDOI
Self-assembled (In,Ga)As/GaAs quantum-dot nanostructures: strain distribution and electronic structure
TLDR
In this article, a simple analytical method for calculating the strain distribution in and around self-assembled (In,Ga)As/GaAs quantum-dot nanostructures is presented.Abstract:
This paper presents a simple analytical method for calculating the strain distribution in and around self-assembled (In,Ga)As/GaAs quantum-dot nanostructures. The dots are assumed to be buried in an infinite medium so that the effects of free surfaces can be neglected. This assumption is based on the relative size of the dot, compared to that of the overlayer. The model—based on classical continuum elasticity—is capable of handling dots of arbitrary shapes; here, however, only dots with pyramidal and truncated-pyramidal shapes are considered. The approximate shape of the dots is extracted from high-resolution transmission electron microscope observations. The electronic energy levels in the dots are calculated by solving the three-dimensional effective mass Schrodinger equation. The carrier confinement potential in this equation is modified by the strain distribution. Because the dots are in a strong confinement regime, the effects of Coulomb interactions are neglected. The calculated confined eigen-energies agree with our experimental photoluminescence data. The calculations also support previous results reported by others.read more
Citations
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Eshelby formalism for nano-inhomogeneities
TL;DR: In this article, the interior and exterior Eshelby tensors for a spherical inhomogeneous inclusion with the interface stress effect subjected to an arbitrary uniform eigenstrain embedded in an infinite alien matrix are obtained.
Journal ArticleDOI
A review of recent works on inclusions
TL;DR: A comprehensive survey of recent works on inclusion in an infinite space, a half-space under prescribed surface loading or a halfspace under surface contact loading or in a finite space can be found in this paper.
Journal ArticleDOI
Theory of electrical conductivity and dielectric permittivity of highly aligned graphene-based nanocomposites.
TL;DR: A new effective-medium theory is presented that is derived from the underlying physical process including the effects of graphene orientation, filler loading, aspect ratio, percolation threshold, interfacial tunneling, and Maxwell-Wagner-Sillars polarization, to determine two properties of highly aligned graphene-polymer nanocomposites.
Journal ArticleDOI
Elastic and piezoelectric fields due to polyhedral inclusions
TL;DR: In this article, the authors derived explicit, closed-form expressions describing elastic and piezoelectric deformations due to polyhedral inclusions in uniform half-space and bi-materials.
Journal ArticleDOI
A unified theory of plasticity, progressive damage and failure in graphene-metal nanocomposites
TL;DR: In this article, a unified theory of plasticity and progressive damage that ultimately leads to the failure of composite is presented, with the small scale constituting the ductile matrix and the microvoids generated during progressive damage, and the large scale combining the damaged metal matrix with 3-D randomly oriented graphene.
References
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Journal ArticleDOI
The Determination of the Elastic Field of an Ellipsoidal Inclusion, and Related Problems
TL;DR: In this paper, it is shown that to answer several questions of physical or engineering interest, it is necessary to know only the relatively simple elastic field inside the ellipsoid.
Journal ArticleDOI
An iteration method for the solution of the eigenvalue problem of linear differential and integral operators
TL;DR: In this article, a systematic method for finding the latent roots and principal axes of a matrix, without reducing the order of the matrix, has been proposed, which is characterized by a wide field of applicability and great accuracy, since the accumulation of rounding errors is avoided, through the process of minimized iterations.
Book
Quantum dot heterostructures
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
Journal ArticleDOI
Band lineups and deformation potentials in the model-solid theory.
TL;DR: In this paper, a theoretical model is presented to predict the band offsets at both lattice-matched and pseudomorphic strained-layer interfaces, based on the local density functional pseudopotential formalism and the ''model solid approach'' of Van de Walle and Martin.