Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates
K. K. Linder,Jamie Phillips,Omar Qasaimeh,X. F. Liu,Sanjay Krishna,P. K. Bhattacharya,Jiechao Jiang +6 more
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In this article, the growth of self-organized In0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy was reported, and the optical properties of the self-organised quantum dots were compared to quantum dots grown on GaAs.Abstract:
We report growth of self-organized In0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that Ith=3.85 kA/cm2. The lasing spectral output has a peak emission wavelength of 1.013 μm and a linewidth (full width at half maximum) of ∼4 A at the threshold.read more
Citations
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References
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Self-organization in growth of quantum dot superlattices.
TL;DR: The growth of multilayer arrays of coherently strained islands self-organizes into a more regular three-dimensional arrangement, providing a possible route to obtain the size uniformity needed for electronic applications of quantum dot arrays.
Journal ArticleDOI
Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
TL;DR: In this article, InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates and the physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.
Journal ArticleDOI
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
TL;DR: Theoretical and experimental studies are presented in this article to understand the initial stages of growth of InGaAs on GaAs and show that the free energy minimum surface of the epilayer is not atomically flat, but three-dimensional in form.
Journal ArticleDOI
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
TL;DR: In this article, the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy were reported, and the emission wavelength was 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser.
Journal ArticleDOI
Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
Marius Grundmann,N. N. Ledentsov,O. Stier,Dieter Bimberg,V. M. Ustinov,P. S. Kop’ev,Zh. I. Alferov +6 more
TL;DR: In photoluminescence spectra of nanometer-scale pyramidal-shaped InAs/GaAs quantum dots, optical transitions involving excited hole states are revealed in addition to the ground state transition as mentioned in this paper.
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