Journal ArticleDOI
Silicon Depletion Layer Magnetometer
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This article is published in Journal of Applied Physics.The article was published on 1970-05-01. It has received 17 citations till now. The article focuses on the topics: Silicon & Depletion region.read more
Citations
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Journal ArticleDOI
Integrated semiconductor magnetic field sensors
Henry Baltes,Radivoje Popovic +1 more
TL;DR: In this article, the authors present a review of magnetic field sensors based on III-V semiconductors, including Hall plates, magnetic field effect transistors, vertical and lateral bipolar magnetotransistors, magnetodiodes, and current domain magnetometers.
Journal ArticleDOI
Magnetic-field-sensitive multicollector n-p-n transistors
V. Zieren,B.P.M. Duyndam +1 more
TL;DR: In this article, the dependence of output signals on bias conditions, which influence the emitter and collector-current distribution, is analyzed theoretically for both two-and four-collector structures.
Journal ArticleDOI
Integrated silicon magnetic-field sensors
TL;DR: A comprehensive up-to-date review of integrated silicon magnetic-field sensors is presented in this paper, together with the functioning and different realizations of Hall plates, FET Hall devices, lateral and vertical magnetotransistor, carrier-domain magnetometers and magnetodiodes.
Journal ArticleDOI
A lateral magnetotransistor structure with a linear response to the magnetic field
TL;DR: In this article, an experimental study and analytical model of a novel magnetotransistor was presented and very high sensitivities were measured, on the order of 3000%/T.
Journal ArticleDOI
Bipolar magnetotransistor sensors. An invited review
TL;DR: A comprehensive review of bipolar magnetotransistor (BMT) sensors is presented in this paper, where the fundamental physical principles that determine magnet transistors' action, depending on the specific design and operating conditions, are discussed.
References
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Journal ArticleDOI
Temperature dependence of hall mobility and μH/μD for Si
Jean Messier,Jorge Merlo Flores +1 more
TL;DR: In this article, the temperature dependence of the Hall mobilities has been determined as 6.4 × 10 9 T −2.91 and 2.6 × 10 8 T−2.06 for holes and electrons respectively.
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A silicon MOS magnetic field transducer of high sensitivity
TL;DR: In this article, a P-channel MOST with the drain diffusion split into two halves was devised, which converted magnetic flux density change to a change in output current. But it was not shown that the output voltage swings may be obtained.
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Total active area silicon photodiode array
TL;DR: In this article, a novel approach is described for fabricating high resolution silicon photodiode arrays whereby virtually none of the irradiated array area is lost for interelement isolation or lead contacting requirements.
Journal ArticleDOI
A silicon hall element for application in an analog multiplier
O.J. Mengali,T.S. Shilliday +1 more
TL;DR: In this paper, a Hall element with characteristics suitable for application in an analog multiplier has been designed and developed using approximately 150 ohms-cm n-type silicon, the resulting elements exhibited outputs of 1·6-1·7 volts at maximum input current and magnetic field.