scispace - formally typeset
Proceedings ArticleDOI

Silicon nanowire-based nanoactuator

Reads0
Chats0
TLDR
In this article, a new class of nanoactuator based on the bimetal thermal effect of chromium-coated silicon nanowires has been demonstrated, where the supporting microheater is heated locally by resistive joule heating which causes the nanowire to deflect due to the difference in the coefficient of thermal expansion (CTE) between chromium and silicon.
Abstract
A new class of nanoactuator based on the bimetal thermal effect of chromium-coated silicon nanowire has been demonstrated. The nanoactuator is fabricated by the localized synthesis process of silicon nanowires and coating them with a 5 nm-thick layer of chromium. Actuation occurs when the supporting microheater is heated locally by resistive joule heating which causes the nanowires to deflect due to the difference in the coefficient of thermal expansion (CTE) between chromium and silicon. Experimentally, the maximum measured deflection of a 3.66 /spl mu/m-long silicon nanowire is 1.52 /spl mu/m under a power input of 31.4 mW to the microheater.

read more

Content maybe subject to copyright    Report

Citations
More filters
Journal ArticleDOI

Size and temperature effects on the fracture mechanisms of silicon nanowires: Molecular dynamics simulations

TL;DR: In this article, molecular dynamics simulations of [1.1.0]-oriented Si nanowires (NWs) under a constant strain rate in tension until failure, using the modified embedded-atom-method (MEAM) potential, were presented.
Journal ArticleDOI

Brittle and ductile fracture of semiconductor nanowires – molecular dynamics simulations

TL;DR: In this paper, a simple parameter based on the ratio between the ideal tensile strength and the ideal shear strength is found to correlate very well with the observed brittle versus ductile behaviors for all the potentials used in this study.
Journal ArticleDOI

Torsion and bending periodic boundary conditions for modeling the intrinsic strength of nanowires

TL;DR: In this article, a unified approach for atomistic modeling of torsion and bending of nanowires that is free from artificial end effects is presented. But the approach is simpler than the more general objective molecular dynamics formulation.
Journal ArticleDOI

Molecular dynamics simulation of the uniaxial tensile test of silicon nanowires using the MEAM potential

TL;DR: In this paper, the authors studied the mechanical and failure behaviors of single-crystalline silicon nanowires by performing uniaxial tensile tests using molecular dynamics simulations with three modified embedded-atom-method (MEAM) potentials, referred to as Baskes, Lee, and Lee-modified.
Patent

Tungsten coated silicon fingers

TL;DR: In this paper, a tungsten/tungsten silicide coating is applied on a silicon finger to increase its resistance to stiction and it is then exposed to a gas containing gases under conditions to promote the formation of the seed layer on the exposed silicon surfaces.
References
More filters
Journal ArticleDOI

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.
Journal ArticleDOI

Inorganic Semiconductor Nanowires: Rational Growth, Assembly, and Novel Properties

TL;DR: A novel microfluidic-assisted nanowire integration (MANI) process was developed for the hierarchical assembly of nanowires building blocks into functional devices and systems.
Journal ArticleDOI

Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices.

TL;DR: In this paper, the assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping, was reported, which can be predictably synthesized as either n- or p-type.
Journal ArticleDOI

Thermally excited silicon microactuators

TL;DR: In this paper, a cantilever-type micromachined silicon actuator based on the bimetal effect used extensively for the fabrication of temperature-controlled electrical switches is described.
Proceedings ArticleDOI

Localized synthesis of silicon nanowires

TL;DR: Localized resistive heating of microstructures has been used to activate vapor-deposition synthesis of silicon nanowires in a room-temperature chamber as discussed by the authors, which enables direct integration of nanotechnology with larger-scale systems for potential sensing and actuation applications.
Related Papers (5)