Journal ArticleDOI
Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55μm: Fabrication and characterization
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TLDR
In this article, the realization and characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55μm, are reported.Abstract:
In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu∕Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55μm is experimentally demonstrated.read more
Citations
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Journal ArticleDOI
Thin-Film Schottky Barrier Photodetector Models
Christine Scales,Pierre Berini +1 more
TL;DR: In this article, a model for the internal quantum efficiency of Schottky barrier photodetectors suitable for the detection of optical radiation below the bandgap energy of the semiconductor is presented.
Journal ArticleDOI
Surface plasmon waveguide Schottky detector.
TL;DR: A surface plasmon polariton detector is demonstrated at infra-red wavelengths and holds promise for short-reach optical interconnects and power monitoring applications.
Journal ArticleDOI
Near-infrared sub-bandgap all-silicon photodetectors: State of the art and perspectives
TL;DR: A review of the state of the art silicon photodetectors based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
Journal ArticleDOI
Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide
Ali Akbari,Pierre Berini +1 more
TL;DR: A silicon-based Schottky contact photodetector integrated into a finite width asymmetric metal stripe supporting short-range surface plasmon polaritons is presented in this article.
Journal ArticleDOI
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
Feng Wu,Hui Xia,Haiding Sun,Junwei Zhang,Fan Gong,Zhen Wang,Long Chen,Peng Wang,Mingsheng Long,Xing Wu,Jianlu Wang,Wencai Ren,Xiaoshuang Chen,Wei Lu,Weida Hu +14 more
TL;DR: In this paper, a vertically stacked van der Waals heterojunction (vdWH) tunneling device is reported consisting of black arsenic phosphorus (AsP) and indium selenide (InSe), which shows a record high reverse rectification ratio exceeding 107 along with an unusual ultralow forward current below picoampere and a high current on/off ratio over 108 simultaneously at room temperature under the proper band alignment design of both the Schottky junction and the heterjunction.
References
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Book
Handbook of Optical Constants of Solids
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Journal ArticleDOI
The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures
TL;DR: In this paper, an elementary theory for the effect of temperature on the photoelectric sensitivity of a clean metal near the threshold is developed, which is in agreement with the conclusions of Lawrence and Linford based on much less extensive data.
Journal ArticleDOI
Resonant cavity enhanced photonic devices
M. Selim Ünlü,Samuel Strite +1 more
TL;DR: In this paper, the authors review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonantmicrocavity.