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Journal ArticleDOI

Single crystals of transition metal trichalcogenides

Francis Lévy, +1 more
- 01 Jan 1983 - 
- Vol. 61, Iss: 1, pp 61-68
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TLDR
In this article, a review of the growth techniques used to crystallize transition metal trichalcogenides is presented, and the experimental conditions which allow the growth of usable single crystals from the vapour phase are described.
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This article is published in Journal of Crystal Growth.The article was published on 1983-01-01. It has received 86 citations till now. The article focuses on the topics: Phase (matter) & Chalcogen.

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Citations
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Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

TL;DR: In this article, a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II, and III heterostructures was presented.
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Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe5

TL;DR: This work reports high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5, and interprets the abrupt changes in the magnetoresistance, indicating field-induced phase transitions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics.
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Growth and Raman spectroscopic characterization of TiO2 anatase single crystals

TL;DR: The metastable anatase phase of titanium dioxide can be grown by chemical transport reactions with NH 4 Cl or HCl as discussed by the authors, and it is characterized by X-ray diffraction and Raman spectroscopic measurements.
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Few-layered titanium trisulfide (TiS3) field-effect transistors

TL;DR: This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.
References
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Journal ArticleDOI

Electric Field Breakdown of Charge-Density-Wave—Induced Anomalies in Nb Se 3

TL;DR: In this paper, the suppression by electric fields of longitudinal resistivity anomalies at 145 and 59 K in the compound Nb${\mathrm{Se}}_{3} was reported, and attributed the observed suppression to Zener breakdown across extremely small gaps introduced by the presence of charge density waves.
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Le seleniure NbSe3: Obtention et structure

TL;DR: In this paper, a phase nouvelle du systeme NbSe3 is obtenue, a partir de 433 reflexions independantes mesurees sur diffractometre automatique NONIUS CAD 3.
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Peierls transition in TaS3

TL;DR: The transition-metal trichalcogenide TaS 3, with an orthorhombic structure was found to undergo a metal-semiconductor transition at 270 K Electron diffraction reveals diffuse scattering above room temperature and superlattice spots at a lower temperature as mentioned in this paper.
Journal ArticleDOI

The crystal structure of niobium trisulfide, NbS3

TL;DR: In this paper, the crystal structure of NbS3 was determined from single-crystal diffractometer data obtained with MoKα radiation, and the compound is triclinic, space group P 1, with: a 4.963 A; b = 6.730 A; c = 9.144 A; α = 90°; β = 97.17
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