Journal ArticleDOI
SiSiO2 interface characterization by ESCA
TLDR
In this article, the concentration profiles of oxide films on Si have been studied by using ESCA and ellipsometry, and the oxide films were found to be composed mostly of stoichiometric SiO 2 with a very thin (about 0.3 nm) layer of SiO at the SiSiO 2 interface.About:
This article is published in Surface Science.The article was published on 1979-06-01. It has received 153 citations till now. The article focuses on the topics: Oxide & Ion milling machine.read more
Citations
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Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range
TL;DR: In this article, the electron inelastic mean free paths (IMFPs) of 14 organic compounds were computed for a group of 14 compounds: 26-n-paraffin, adenine, β-carotene, bovine plasma albumin, deoxyribonucleic acid, diphenylhexatriene, guanine, kapton, polyacetylene, poly(butene-1-sulfone), polyethylene, polymethylmethacrylate, polystyrene and poly(2-vinyl
Journal ArticleDOI
Calculations of electron inelastic mean free paths for 31 materials
TL;DR: In this paper, the authors presented new calculations of electron inelastic mean free paths (IMFPs) for 200-2000 eV electrons in 27 elements (C, Mg, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au and Bi).
Journal ArticleDOI
Probing the transition layer at the SiO2‐Si interface using core level photoemission
G. Hollinger,F. J. Himpsel +1 more
TL;DR: In this article, high resolution Si 2p photoelectron spectra obtained with synchrotron radiation were used to determine the distribution of oxidation states in the intermediary layer at the SiO2Si interface.
Journal ArticleDOI
Chemical and electronic structure of the SiO2/Si interface
TL;DR: In this article, the chemical structure of the SiO2/Si interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties were investigated.
Journal ArticleDOI
Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
TL;DR: In this article, the authors compared the residue and chemical passivation after hydrogen termination by various low-temperature, wet-chemical techniques, cleaving in ultrahigh vacuum (UHV), and ion sputtering.
References
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ESCA : atomic, molecular and solid state structure studied by means of electron spectroscopy
Kai Siegbahn,Carl Nordling,A. Fahlman,R. Nordberg,Kuell Hamrin,J. Hedman,G. Johansson,T. Bergmark +7 more
Journal ArticleDOI
Optical properties of non-crystalline Si, SiO, SiOx and SiO2
TL;DR: In this paper, optical properties of non-crystalline Si, SiO and SiO x (x = 1·5) were analyzed for the energy region 1 to 26 eV and the results indicated that amorphous substances of all intermediate compositions between Si and Si O 2 can be formed and that these materials are not simple mixtures of Si and O 2 but rather the two atom species are blended on an atomic scale.
Journal ArticleDOI
Surface investigation of solids by the statical method of secondary ion mass spectroscopy (SIMS)
TL;DR: In this article, secondary ion mass spectroscopy (SIMS) was used to investigate the chemical composition of the uppermost monomolecular layer of the bombarded surface.
Journal ArticleDOI
Structural Evaluation of Silicon Oxide Films
W. A. Pliskin,H. S. Lehman +1 more
TL;DR: In this paper, it has been established that by the use of infrared absorption spectroscopy, preferential etching procedures, precise optical measurements of thickness, density, and refractive indices, and carefully chosen environmental tests, differences in the oxide films can be determined.
Journal ArticleDOI
Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
R. Flitsch,S. I. Raider +1 more
TL;DR: The mean escape depths of Si 1s, Si 2p, and O 1s photoelectrons from silicon−silicon dioxide structures were determined over a wide kinetic energy range with magnesium, aluminum, and chromium x−ray sources as discussed by the authors.
Related Papers (5)
Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
R. Flitsch,S. I. Raider +1 more