Patent
SOI fabrication method
Reads0
Chats0
TLDR
In this article, a first region of a seed substrate is separated from a bonded handle substrate by etching and/or fracturing a second region of the seed substrate, and a third region remains bonded to the handle wafer.Abstract:
A first region of a seed substrate is separated from a bonded handle substrate by etching and/or fracturing a second region of the seed substrate. A third region of the seed substrate remains bonded to the handle wafer. Etching and etch ant distribution are facilitated by capillary action in trenches formed in the seed substrate prior to bonding of the handle substrate. A portion of the second region may be removed by undercut etching prior to handle bonding. Elevated pressure and etchant composition are used to suppress bubble formation during etching. Alternatively, pressure from bubble formation is used to fracture a portion of the second region. First, second, and third regions are defined by a variety of methods.read more
Citations
More filters
Patent
Methods and devices for fabricating and assembling printable semiconductor elements
Ralph G. Nuzzo,John A. Rogers,Etienne Menard,Keon Jae Lee,Dahl-Young Khang,Yugang Sun,Matthew Meitl,Zhengtao Zhu +7 more
TL;DR: In this article, the authors present methods and devices for fabricating printable semiconductor elements and assembling them onto substrate surfaces, which are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on polymeric materials.
Patent
Bonded intermediate substrate and method of making same
Thomas Henry Pinnington,James M. Zahler,Young-Bae Park,Charles S. Tsai,Corinne Ladous,Harry Jr. A. Atwater,Sean Olson +6 more
TL;DR: In this article, an intermediate substrate is defined as a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Atomic layer deposition and conversion
TL;DR: A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described in this article, where a metal atomic layer is oxidized to form a metal oxide layer.
Patent
Controlled cleaving process
TL;DR: In this paper, an energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving activity provides an expanding cleave front to free the donor material from a remaining portion of the remaining portion.
References
More filters
Book
Treatise on analytical chemistry
TL;DR: Treatise on analytical chemistry, Treatise of analytical chemistry as mentioned in this paper, treatise on analyzing analytical chemistry, TCA, and analytical chemistry literature, کتابخانه دیجیتالی دانشگاه علوم پزش
Journal ArticleDOI
Extreme selectivity in the lift‐off of epitaxial GaAs films
TL;DR: In this paper, conditions for the selective lift-off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown were discovered.
Journal ArticleDOI
Epitaxial layer transfer by bond and etch back of porous Si
TL;DR: In this paper, an epitaxial Si layer over porous Si is transferred onto a dissimilar substrate by bonding and etch back of porous Si. The highest etching selectivity is achieved by the alkali free solution of HF, H2O2, and H 2O which is essential for this single etch-stop method to produce a submicron-thick active layer with superior thickness uniformity (473±14 nm) across a 5 in. silicon-on-insulator wafer.
Patent
Method of producing sheets of crystalline material and devices made therefrom
TL;DR: In this article, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of material.
Patent
Lift-off and subsequent bonding of epitaxial films
TL;DR: In this article, a method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure is presented.