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Open AccessJournal ArticleDOI

Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

TLDR
In this paper, a transparent diodes formed by a heterojunction between p-type CuS-ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating.
Abstract
Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W−1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.

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Journal ArticleDOI

A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO2 Photodetector.

TL;DR: The first real-time wearable UV radiation sensor that reads out ambient UV power density and transmits data to smart phones via wifi is demonstrated, and provides a general strategy for designing and fabricating smart wearable electronic devices.
Journal ArticleDOI

Materials and Designs for Wearable Photodetectors.

TL;DR: The fundamental design principles of turning "hard" photodetectors "soft," including 2D (polymer and paper substrate-based devices) and 1D PDs (fiber shaped devices) are summarized, which serve as the roadmap for future exploration in wearable PDs in various applications, including health monitoring and Internet of Things.
Journal ArticleDOI

Self-powered UV photodetectors based on ZnO nanomaterials

TL;DR: In this paper, a review of the recent research on different types of ZnO-based self-powered UV photodetectors is outlined, and possible opportunities and directions for the future developments of these photodeterors are proposed.
Journal ArticleDOI

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

TL;DR: In this article, the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review.
Journal ArticleDOI

Self-Powered n-SnO2/p-CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance

TL;DR: In this article, a single-crystal SnO2 microwire photodetector is demonstrated with a fast response time owing to a low concentration of point defects. But the response time of the works mentioned above is still dissatisfactory, of which the decay time is >50 s,[22] ≈50 s, and 7.8 s, respectively.
References
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Journal ArticleDOI

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI

Past achievements and future challenges in the development of optically transparent electrodes

TL;DR: In this article, the authors compared carbon nanotube, metal nanowire networks, and regular metal grids with the usual transparent conductive oxides for optically transparent electrode applications.
Journal ArticleDOI

Transparent Conducting Oxides

David S. Ginley, +1 more
- 01 Aug 2000 - 
TL;DR: In the interim between the conception of this issue of MRS Bulletin on transparent conducting oxides and its publication, remarkable applications dependent on these materials have continued to make sweeping strides.
Journal ArticleDOI

Wide-bandgap semiconductor ultraviolet photodetectors

TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.
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