Journal ArticleDOI
Wide-bandgap semiconductor ultraviolet photodetectors
TLDR
In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.Abstract:
Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.read more
Citations
More filters
Journal ArticleDOI
Organic light detectors: photodiodes and phototransistors.
TL;DR: This review suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto -electronic switch and memory.
Journal ArticleDOI
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
TL;DR: A review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented in this paper, where a brief insight into the detection mechanisms of 2D material photodeterceptors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photoderectors is provided.
Journal ArticleDOI
Solution-processed ultraviolet photodetectors based on colloidal ZnO nanoparticles.
TL;DR: The photocurrent of the device is associated with a light-induced desorption of oxygen from the nanoparticle surfaces, thus removing electron traps and increasing the free carrier density which in turn reduces the Schottky barrier between contacts and ZnO nanoparticles for electron injection.
Journal ArticleDOI
Nanostructured materials for photocatalysis
Chunping Xu,Prasaanth Ravi Anusuyadevi,Cyril Aymonier,Rafael Luque,Rafael Luque,Samuel Marre +5 more
TL;DR: This review has classified the so far reported highly efficient modified/unmodified semiconductor photocatalysts into four different categories based on the elemental composition, band gap engineering and charge carrier migration mechanism in composite photoc atalysts.
Journal ArticleDOI
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
References
More filters
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Electron transport at metal-semiconductor interfaces : general theory
TL;DR: Results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
Journal ArticleDOI
Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
ZnO Schottky ultraviolet photodetectors
TL;DR: In this paper, the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films were presented, which were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition.
Journal ArticleDOI
GaN avalanche photodiodes
J. C. Carrano,D. J. H. Lambert,C. J. Eiting,C. J. Collins,T. Li,S. Wang,B. Yang,Ariane L. Beck,Russell D. Dupuis,Joe C. Campbell +9 more
TL;DR: In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.