Journal ArticleDOI
TEAM: ThrEshold Adaptive Memristor Model
TLDR
It is shown that the proposed TEAM, ThrEshold Adaptive Memristor model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.Abstract:
Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented-TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.read more
Citations
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Journal ArticleDOI
MAGIC—Memristor-Aided Logic
Shahar Kvatinsky,Dmitry Belousov,Slavik Liman,Guy Satat,Nimrod Wald,Eby G. Friedman,Avinoam Kolodny,Uri Weiser +7 more
TL;DR: In this brief, a memristor-only logic family, i.e., memristar-aided logic (MAGIC), is presented, and in each MAGIC logic gate, memristors serve as an input with previously stored data, and an additional Memristor serves as an output.
Journal ArticleDOI
VTEAM: A General Model for Voltage-Controlled Memristors
TL;DR: The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors and has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled Memristors.
Journal ArticleDOI
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
TL;DR: The IMPLY logic gate, a memristor-based logic circuit, is described and a methodology for designing this logic family is proposed, based on a general design flow suitable for all deterministic memristive logic families.
Journal ArticleDOI
Pattern classification by memristive crossbar circuits using ex situ and in situ training
TL;DR: In this article, a single-layer perceptron network implemented with a memrisitive crossbar circuit and trained using the perceptron learning rule by ex situ and in situ methods is presented.
Pattern classification by memristive crossbar circuits with ex-situ and in-situ training
TL;DR: In this paper, a single-layer perceptron network implemented with a memrisitive crossbar circuit and trained using the perceptron learning rule by ex situ and in situ methods is presented.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film
TL;DR: In this article, a formula for the electric tunnel effect through a potential barrier of arbitrary shape existing in a thin insulating film was derived for a rectangular barrier with and without image forces, where the true image potential was considered and compared to the approximate parabolic solution derived by Holm and Kirschstein.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.