Journal ArticleDOI
Structural and electrical properties of sodium bismuth titanate (Na0.5Bi0.5TiO3) thin films optimized using the Taguchi approach
TLDR
In this paper, controlable Pulsed Laser Deposition (PLD) parameters have been optimized to grow Na 0.5Bi0.5TiO3 (NBT) thin films using a Taguchi L18 orthogonal array.About:
This article is published in Ceramics International.The article was published on 2014-01-01. It has received 10 citations till now. The article focuses on the topics: Taguchi methods & Sodium bismuth titanate.read more
Citations
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Journal ArticleDOI
Ferroelectric properties of manganese doped (Bi 1/2 Na 1/2 )TiO 3 and (Bi 1/2 Na 1/2 )TiO 3 -BaTiO 3 epitaxial thin films
A. Gallegos-Melgar,D.G. Espinosa-Arbeláez,F. J. Flores-Ruiz,A. Lahmar,J.-L. Dellis,N. Lemée,F.J. Espinoza-Beltrán,Juan Muñoz-Saldaña +7 more
TL;DR: In this paper, the effects of Manganese doped (Bi 1/2 Na 1/ 2 )TiO 3 and BaTiO3 epitaxial thin films on the structure, dielectric, ferroelectric and piezoelectric properties are reported.
Journal ArticleDOI
Influence of oxygen gas pressure on phase, microstructure and electrical properties of sodium bismuth titanate thin films grown using pulsed laser deposition
TL;DR: In this article, Na0.5Bi0.3 (NBT) thin films were grown with oxygen gas pressure in the range of 5-Pa and 100-Pa. NBT thin film grown at 30-Pa shows improved properties when compared to films grown at other pressures.
Journal ArticleDOI
Enhanced dielectric and ferroelectric properties of surface hydroxylated Na0.5Bi0.5TiO3 (NBT)-poly(vinylidene fluoride) (PVDF) composites
TL;DR: The surface hydroxylation treatment has been carried out by using hydrogen peroxide (H2O2) to modify the surface of Na 0.5Bi0.5TiO3 (NBT) particles in a ferroelectric polymer (PVDF) via solution cas...
Journal ArticleDOI
Strain-induced effects in the electronic and optical properties of Na0.5Bi0.5TiO3: An ab-initio study
TL;DR: In this article, the ground-state properties of NBT were studied using first-principles calculations based on density functional theory (DFT), and the electronic band structure revealed that the direct and indirect band gaps are rather close (within ∼ 0.07 eV of each other).
Journal ArticleDOI
Microstructural influence on ferroelectric domain pattern and piezoelectric properties of Na0.5Bi0.5TiO3 thin films
TL;DR: In this paper, the authors used pulsed laser deposition technique to fabricate thin films with various growth conditions (substrate temperature from 400°C to 650°C and oxygen pressure from 50 to 200mTorr).
References
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Book
Quality Engineering Using Robust Design
TL;DR: This book offers a complete blueprint for structuring projects to achieve rapid completion with high engineering productivity during the research and development phase to ensure that high quality products can be made quickly and at the lowest possible cost.
Journal ArticleDOI
Ferroelectric and electrical behavior of (Na0.5Bi0.5)TiO3 thin films
TL;DR: In this article, the growth of polycrystalline NBT thin films by radio-frequency magnetron sputtering and their ferroelectric behavior was investigated, and it was shown that HOpping of oxygen vacancies trapped at the grain boundaries is responsible for the high dielectric l...
Journal ArticleDOI
Preparation and properties of sol-gel-derived Bi0.5Na0.5TiO3 lead-free ferroelectric thin film
TL;DR: In this paper, a polycrystalline ferroelectric lead-free BNT thin film was successfully deposited on Pt/Ti/SiO 2 /Si substrates by an improved sol-gel process using rapid thermal annealing.
Journal ArticleDOI
Preparation and electrical properties of highly (111)-oriented (Na0.5Bi0.5)TiO3 thin films by a sol-gel process
TL;DR: In this paper, thin films were grown on Pt/Ti/SiO 2 /Si substrates via a sol-gel process, and the Au/NBT/Pt thin film capacitor showed a hysteresis loop at an applied electric field of 200 kV/cm with remanent polarization (P r ) and coercive electric field (E c ) values of 20.9 μC/cm 2 and 112 kV /cm, respectively.
Journal ArticleDOI
Optimization of the deposition process of ZrN and TiN thin films on Si(1 0 0) using design of experiment method
TL;DR: In this article, the authors verify the feasibility and reliability of the application of the DOE method on PVD processes and optimize the processing parameters for the deposition process, in which the sensitive parameters that affected the film properties were also identified.