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Journal ArticleDOI

Structural changes of evaporated tantalum during film growth

K. Hieber, +1 more
- 02 Apr 1982 - 
- Vol. 90, Iss: 1, pp 43-50
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TLDR
In this article, it was shown that the resistivity of an infinitely thick film with the same structure as a thin film can be determined from the graph of ϱd versus d (where ϱ is the resistivities and d the film thickness).
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This article is published in Thin Solid Films.The article was published on 1982-04-02. It has received 33 citations till now. The article focuses on the topics: Tantalum & Thin film.

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Citations
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Journal ArticleDOI

The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

TL;DR: In this paper, the authors demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes a large decrease in the resistance of thin films and a complete stress relaxation in films that were intrinsically compressively stressed.
Journal ArticleDOI

Tantalum films for protective coatings of steel

TL;DR: In this article, conditions resulting in the deposition of bcc and tetragonal phases of tantalum and the evolution of the phase composition and crystallinity during the film growth from nanometers to tens of micrometers were investigated.
Journal ArticleDOI

Texture and phase transformation of sputter-deposited metastable Ta films and Ta/Cu multilayers

TL;DR: In this paper, the structure and the crystallographic orientation of d.c.-magnetron sputtered Ta films were investigated using wide-angle X-ray diffraction after preparation and after annealing.
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Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

TL;DR: In this article, the impact of varying the nitrogen flow rate and the underlying titanium on the phase formation process was also investigated using X-ray diffractometry, resistivity measurement and scanning electron microscopy.
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Properties of thick sputtered Ta used for protective gun tube coatings

TL;DR: In this article, the phase and micro-structural effects resulting from changes in sputtering gas species and substrate bias during the deposition were investigated using X-ray diffraction, optical microscopy, and microindentation hardness measurements.
References
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Journal ArticleDOI

The mean free path of electrons in metals

TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
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Resistivity and Temperature Coefficient of Thin Metal Films with Rough Surface

TL;DR: In this paper, the surface roughness of thin metal films has been used to predict the thickness dependence of resistivity and its temperature coefficient of metal films, and the ratio of the roughness to the mean free path, h/λ, is introduced as a convenient parameter.
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Mean free path and density of conductance electrons in platinum determined by the size effect in extremely thin films

TL;DR: In this article, a new method was developed to determine the mean free path of thin metal films by investigating the thickness dependence of the conductivity of thin thin films, including surface effects as given by the specularity parameter $p$ and the surface roughness amplitude $h$.
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Stabilization of sputtered β-tantalum by a tantalum silicide interlayer

TL;DR: In this article, a Ta-Si reaction zone between the film and the substrate was analyzed using secondary ion mass spectrometry depth profiles, and the results indicated that tantalum nucleates in the β modification if a Ta Si reaction zone exists between the substrate and the film.
Journal ArticleDOI

UHV – Deposited Amorphous Tantalum and Tantalum–Nickel Films

TL;DR: In this paper, the structure of the tantalum-nickel films, which are stable up to 300°C, was investigated by transmission electron microscopy, showing that even in the amorphous state different conduction mechanisms may exist.
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