Journal ArticleDOI
Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique
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TLDR
In this paper, a single crystalline SiC film was prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalized SiC and the as-deposited films were annealed in the temperature range of 700-1000°C under nitrogen ambient.About:
This article is published in Vacuum.The article was published on 2005-08-19. It has received 49 citations till now. The article focuses on the topics: Auger electron spectroscopy & X-ray photoelectron spectroscopy.read more
Citations
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Effect of sputtering power on the structure and optical band gap of SiC thin films
TL;DR: Amorphous SiC (a-SiC) thin films with a quartz plate as the substrate were prepared under different radio frequency (RF) powers through RF magnetron sputtering as mentioned in this paper.
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Characterizations of pulsed laser deposited SiC thin films
Y. S. Katharria,Sandeep Kumar,Ram Prakash,R. J. Choudhary,Fouran Singh,Deodatta M. Phase,D. Kanjilal +6 more
TL;DR: In this article, thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1/0/0) substrates at a temperature of 370°C.
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The adhesion strength and deuterium permeation property of SiC films synthesized by magnetron sputtering
TL;DR: Silicon carbide films were synthesized at varied temperatures by radio frequency magnetron sputtering to improve the tritium permeation resistance of 316L stainless steel as discussed by the authors. But the results showed that SiC films were uniform and amorphous.
Journal ArticleDOI
Preparation of silicon carbide film by a plasma focus device
TL;DR: In this article, a 20 kJ Mather-type dense plasma focus device was used to grow polycrystalline 3C silicon carbide (SiC) films on the silicon (100) substrate by using X-ray diffractometer, Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor.
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Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates
TL;DR: In this paper, the authors reported the in-situ fabrication of nanocrystalline rhombohedral silicon carbide (15R-SiC) thin films by RF-magnetron sputtering at 800 °C substrate temperature.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
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Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO 2 matrix: Evidence in support of the quantum-confinement mechanism
TL;DR: Broadband photoluminescence spectra are observed in the visible wavelength range at room temperature, and they exhibit pronounced blueshifts of the peak energies and broadening of the PL spectra, which can be correlated to the change in the size.
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Precipitation and relaxation in strained Si1−yCy/Si heterostructures
TL;DR: In this article, the authors studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers.
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Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
TL;DR: In this article, the authors performed physical and optical characterization of Si nanocrystals grown by ion implantation of Si+ ions at multiple energies with varying doses into thermally grown SiO2 films.