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Surface reactivity of luminescent porous silicon

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TLDR
The effects of organoamine molecules on the luminescence of porous silicon has been examined by steadystate photoluminescence (PL) and Fourier transform infrared spectroscopies as mentioned in this paper.
Abstract
The effects of addition of a series of organoamine molecules on the luminescence of porous silicon has been examined by steady‐state photoluminescence (PL) and Fourier transform infrared spectroscopies. These samples, prepared nonanodically via stain etching techniques and characterized by atomic force microscopy, show dramatic quenching of visible PL upon addition of dilute solutions of the above Lewis base adsorbates. The fractional changes in integrated PL intensity as a function of quencher concentration obey a simple equilibrium model, demonstrating Langmuir‐type behavior from which equilibrium constants can be calculated. An observation concomitant with this loss of PL is a diminution of the silicon hydride stretching frequencies near 2100 cm−1.

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Porous silicon: a quantum sponge structure for silicon based optoelectronics

TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
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Direct synthesis and properties of K2SiF6:Mn4+ phosphor by wet chemical etching of Si wafer

TL;DR: In this paper, a new method of synthesizing Mn-activated phosphor was presented using only chemical etching of Si wafer in HF/H2O solution with the addition of an oxidizing agent KMnO4.
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Porous silicon—mechanisms of growth and applications

TL;DR: The present state-of-the-art in understanding the mechanisms of the formation of porous silicon and its physical properties is reviewed, with special emphasis on problems which were not much in the focus of existing review literature.
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Photoluminescence-Based Sensing With Porous Silicon Films, Microparticles, and Nanoparticles

TL;DR: In this article, chemical sensors made from porous Si are reviewed, with an emphasis on systems that harness photoluminescence and related energy and charge-transfer mechanisms available to porous Si-derived nanocrystallites.
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Porous-silicon vapor sensor based on laser interferometry

TL;DR: In this paper, a porous-silicon (PS) films exhibit well-resolved Fabry-Perot fringes in their optical reflection spectra due to thin-film interference, which shift to higher wavelengths when the PS is exposed to vapors from organic solvents, as a result of an increase in the average refractive index of the PS layer.
References
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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
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Visible light emission due to quantum size effects in highly porous crystalline silicon

A. G. Cullis, +1 more
- 01 Sep 1991 - 
TL;DR: In this paper, the structure of the porous layers that emit red light under photoexcitation was revealed, which constitutes direct evidence that highly porous silicon contains quantum-size crystalline structures responsible for the visible emission.
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The origin of visible luminescencefrom “porous silicon”: A new interpretation

TL;DR: In this paper, the authors compared the luminescence and vibrational properties of anodically oxidized (porous) silicon and of chemically synthesized siloxene (Si 6 O 3 H 6 ) and its derivates.
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Luminescence degradation in porous silicon

TL;DR: In this paper, the stability of the luminescence from porous Si in the presence of a variety of ambient gases (e.g., N2, H2, forming gas, and O2) was studied.
Journal ArticleDOI

Mechanisms of visible-light emission from electro-oxidized porous silicon.

TL;DR: High-porosity porous silicon, after electrochemical oxidation, is a stable and highly reproducible luminescent material with a luminescence quantum efficiency as high as 3% at room temperature and this tunneling model is used to explain successfully the increase in quantum efficiency with the increase of the level of oxidation.
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