Journal ArticleDOI
SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells
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TLDR
In this paper, the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions were presented.Abstract:
This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8 μm with dark current densities of 9.7 and 1.66 mA cm-2,respectively, at 290 K under -0.5 V reverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.read more
Citations
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Journal ArticleDOI
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.
Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Qimiao Chen,Xin Guo,Kwang Hong Lee,Simon Chun Kiat Goh,Xiao Gong,Chuan Seng Tan +10 more
TL;DR: In this article, the photon-trapping microstructures were introduced into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W.
Journal ArticleDOI
Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
TL;DR: In this paper, the transition wavelength and wave function overlap of type-II InxGa1-xAs/GaAs1-ySby quantum wells are numerically calculated using a 4-band k · p Hamiltonian model.
Journal ArticleDOI
Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector
Kaimin Xu,Xiongbin Xiao,Xiongbin Xiao,Wenjia Zhou,Xianyuan Jiang,Qi Wei,Hao Chen,Zhuo Deng,Jian Huang,Baile Chen,Zhijun Ning +10 more
TL;DR: This work introduces an inverted structure photodetector based on n-type Si and p-type PbS CQDs, which has lower energy band offset which provides higher efficient charge extraction for device.
Journal ArticleDOI
Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications
C. H. Pan,C. P. Lee +1 more
TL;DR: In this article, the authors theoretically studied the InP based InGaAs/GaAsSb /InAlAs type-II "W" quantum wells (QWs) using the eight band k.p theory.
Journal ArticleDOI
InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region
Baile Chen,Archie L. Holmes +1 more
TL;DR: Preliminary results show that this novel strain-compensated approach to InP-based p-type/intrinsic/n-type (PIN) photodiodes with a Novel strain-Compensated type-II InGaAs/GaAsSb quantum well active region leads to similar performance when compared to a conventional strain- COMPENSated approach.
References
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Journal ArticleDOI
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TL;DR: In this article, the performance of infrared thermal detectors as compared to photon detectors is investigated and an overview of focal plane array architecture is given with emphasis on monolithic and hybrid structures.
Fundamentals of infrared detector operation and testing
TL;DR: In this paper, the authors present a survey of detector types, Mechanisms, and operation, including the test set, detector testing, and detector types and their application in detection.
Journal ArticleDOI
A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
TL;DR: In this article, a photodiode on InP substrate with a cutoff wavelength of 2.39 /spl mu/m and peak room-temperature external quantum efficiency of 43% at 2.23 /spl µ/m was reported.
Journal ArticleDOI
Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes
TL;DR: In this paper, it was shown that the electron to hole ionization coefficient ratios are comparable to those reported for Hg1-xCdxTe electron avalanche photodiodes.
Journal ArticleDOI
Characterization of midwave infrared InAs/GaSb superlattice photodiode
TL;DR: In this article, structural, electrical, and optical characterizations of midwave infrared InAs/GaSb superlattice (SL) p-i-n photodiodes were reported.
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