Journal ArticleDOI
Technology and Performance of TFA (Thin Film on ASIC-Sensors
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TLDR
In this article, a TFA image sensor consists of an amorphous silicon based multilayer structure on top of a crystalline ASIC, which acts as the optical detector and performs analog or digital signal processing for each individual pixel.Abstract:
A TFA image sensor consists of an amorphous silicon based multilayer structure on top of a crystalline ASIC. The Multilayer acts as the optical detector, whereas the ASIC performs analog or digital signal processing for each individual pixel. Depending on the operation Mode, the dynamic range of the detector exceeds the performance of conventional CCDs by far. Pixel electronics which is adapted to the requirements of the detector can thereby maximize the dynamic range of the complete sensor array. Crosstalk among adjacent pixels can be eliminated by technological or electronic Means.read more
Citations
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Journal ArticleDOI
Amorphous Silicon Three Color Detector
TL;DR: In this article, the defect state distribution of dangling bonds according to the defect-pool model and using coherent wave propagation in the device to calculate the profile of photo generated carriers is discussed using a numerical simulation program.
Journal ArticleDOI
Three-color sensor based on amorphous n-i-p-i-n layer sequence
TL;DR: In this article, an amorphous silicon-based n-i-p-i n three-color sensor with a layer sequence of substrate/metal/n-i,p-I-n/transparent contact is presented.
Journal ArticleDOI
a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers
TL;DR: In this article, the authors developed a photodiode array technology that is fully compatible with 0.35 μm CMOS process flows to produce image sensors arrays with 10-bit dynamic range that are 30% smaller than comparable standard crystalline silicon photodiodes.
Journal ArticleDOI
Optimization of a-Si:H-based three-terminal three-color detectors
TL;DR: In this article, three-terminal three-color n-SiC:H/a-Si:H-based TCO/PINIP/TCO/PIN/metal detectors are compared with regard to the external steady-state characteristics and transient behavior.
Proceedings ArticleDOI
TFA image sensors: from the one transistor cell to a locally adaptive high dynamic range sensor
B. Schneider,H. Fischer,S. Benthien,H. Keller,T. Lule,P. Rieve,M. Sommer,J. Schulte,Markus Böhm +8 more
TL;DR: In this paper, the authors present prototypes of image sensors in thin film on ASIC (TFA) technology, the ASICs have been fabricated in a standard 0.7 /spl mu/m CMOS process, the detector multilayer was deposited by PECVD.
References
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Journal ArticleDOI
A random access photodiode array for intelligent image capture
TL;DR: In this article, a chip implementing random scan was designed, fabricated, and tested, which covers the basic requirements for random access and separation between the sampling and reading processes, in this way, a repeated reading of any pixel at any time can take place.
Journal ArticleDOI
An object position and orientation IC with embedded imager
TL;DR: A CMOS VLSI chip that determines the position and orientation of an object against a dark background that operates in a continuous-time analog fashion, with a response time as short as 200 mu s and power consumption under 50 mW.
Journal Article
A random access photodiode array for intelligent image capture
TL;DR: A chip implementing random scan was designed, fabricated, and tested and was found to operate functionally, however, the use of a standard process gave rise to the crosstalk phenomenon, which has yet to be overcome.
Journal ArticleDOI
Thin Film on Asic - A Novel Concept for Intelligent Image Sensors
TL;DR: In this paper, two different pixel detectors have been fabricated, each of them consisting of an a-Si:H based photodiode layer on top of a crystalline silicon integrated circuit.