Journal ArticleDOI
Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms
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TLDR
In this article, the size of the microcrystals in as-deposited films was dependent both on the deposition temperature and on the oxygen concentration, and the lattice constant was directly related to their size.Abstract:
Thermally deposited silicon films doped with oxygen atoms and used as passivation films on silicon devices have been studied with transmission electron microscopy, x‐ray diffraction, and ESCA. The films contain at least two phases, silicon microcrystals and silicon oxide. The size of the microcrystals in as‐deposited films was dependent both on the deposition temperature and on the oxygen concentration. Heat treatment caused crystal growth which depended mainly on the annealing temperature and weakly on the annealing time. The lattice constant of the microcrystals was directly related to their size. The silicon oxide phase in as‐deposited films was found to be SiO1.4. The results suggest ’’mosaic’’ model of the films which are amorphous when the diameter of the silicon microcrystals was less than 10 A.read more
Citations
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Journal ArticleDOI
An interface clusters mixture model for the structure of amorphous silicon monoxide (SiO)
A. Hohl,Thomas Wieder,P. A. van Aken,Thomas E. Weirich,G. Denninger,M. Vidal,S. Oswald,Christoph Deneke,Joachim Mayer,Hartmut Fuess +9 more
TL;DR: In this paper, the authors reviewed the state of the art on the structure of amorphous silicon monoxide (SiO) using diffraction, microscopy, spectroscopy, and magnetometry methods.
Journal ArticleDOI
Annealing characteristics of Si‐rich SiO2 films
TL;DR: In this article, the growth and crystallinity of the silicon clusters were monitored by transmission electron microscopy and the minimum silicon crystal diameter was measured at 2.5 nm for both atmospheric and plasma-enhanced CVD films.
Journal ArticleDOI
Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)
TL;DR: In this article, clear and simple relationships among oxygen content, peak position in the 9-10 μm region and intensity of infrared absorption were obtained for a wide range of x value in evaporated silicon oxides (SiOx).
Journal ArticleDOI
High current injection into SiO2 from Si rich SiO2 films and experimental applications
D. J. DiMaria,D. W. Dong +1 more
TL;DR: In this article, the dependence of this injection mechanism on the Si rich SiO2 composition and thickness, temperature, capacitor area, annealing conditions, gate metal (Al or Au), and underlying SiO 2 thickness is described.
Journal ArticleDOI
Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon
TL;DR: In this article, a semi-insulating polycrystalline silicon films with oxygen concentrations in the range 4-27 at.m. were deposited by low-pressure chemical vapor deposition of SiH4 and N2O onto silicon substrates, annealed at 920°C, and then implanted with 2×1015 500 keV Er ions/cm2.
References
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Book
Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI
Electron-Diffraction Study of Liquid-Solid Transition of Thin Metal Films
TL;DR: In this paper, the melting point of thin films of Pb, Sn and Bi at various temperatures has been studied by electron diffraction method and the observed melting points are found to be lower than those of bulk metals.
Journal ArticleDOI
High-Resolution Electron Microscope Observation of Voids in Amorphous Ge
Terence M. Donovan,K. Heinemann +1 more
TL;DR: In this article, the existence of void networks in amorphous Ge films formed at substrate temperatures of 25 and 150 C and the absence of a void network in higher substrate temperatures at 200 and 250 C were shown.
Journal ArticleDOI
Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology
Takeshi Matsushita,Teruaki Aoki,Takaji Otsu,Hisayoshi Yamoto,Hisao Hayashi,Masanori Okayama,Yoshiyuki Kawana +6 more
TL;DR: In this article, the passivation properties of oxygen-doped polycrystalline-silicon (SIPOS) films have been examined as a function of oxygen concentration, and the leakage currents of 800 V pnp transistors did not increase even after the chips were exposed to water vapor at 100°C and to sodium contamination at 200°C.
Journal ArticleDOI
Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atoms
TL;DR: In this article, the temperature dependence of the electrical conductivity of SIPOS showed that there are two kinds of conduction mechanisms, conduction in extended states and hopping conduction through localized states dominant above and below room temperature.