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Journal ArticleDOI

The cracking of Czochralski-grown crystals

J.C. Brice
- 01 Dec 1977 - 
- Vol. 42, pp 427-430
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TLDR
In this article, the authors examined the thermal strains existing in crystals during and after pulling and the strains which can be built-in by the facet effect, and they showed that during the growth of a crystal with a radius R, there is a maximum acceptable axial gradient roughly proportional to R−1.5 and that to prevent cracking after growth, there was a maximum rate of cooling proportional to r−2.
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This article is published in Journal of Crystal Growth.The article was published on 1977-12-01. It has received 87 citations till now. The article focuses on the topics: Bismuth silicon oxide & Lattice constant.

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Citations
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Journal ArticleDOI

Directionally solidified eutectic ceramic oxides

TL;DR: In this article, the authors reviewed the development of directionally solidified eutectic ceramic oxides with particular attention to the developments in the last 15 years, and analyzed the control of the microstructure from the processing variables, the recently gained knowledge on their micro-structure (crystallographic orientation, interface structure, residual stresses, etc.).
Journal ArticleDOI

Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 Crystals

TL;DR: In this article, single crystals doped with Al, Ga, P, Pb, Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality.
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Microstructure of Y2O3 doped Al2O3–ZrO2 eutectics grown by the laser floating zone method

TL;DR: In this article, the laser floating zone (LFZ) method was used to obtain a homogeneous, colony-free, interpenetrating lamellar microstructure.
Journal ArticleDOI

Development of Fiber-Optic Voltage Sensors and Magnetic-Field Sensors

TL;DR: In this article, the principle, temperature and frequency characteristics of fiber-optic voltage sensors and magnetic field sensors are reported, along with the results of an aging test on these sensors.
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A thermoelastic analysis of the thermal stress produced in a semi-infinite cylindrical single crystal during the Czochralski growth

TL;DR: In this paper, the authors analyzed the thermal stress produced in a semi-infinite single crystal during the growth by temperature variations and numerically calculated the resolved shear stress for various Biot numbers and Peclet numbers.
References
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Book

Theory of elasticity

TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
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Some Defects in Crystals Grown from the Melt. I. Defects Caused by Thermal Stresses

TL;DR: In this article, it was shown that the regions of high etch-pit concentration are related to a curved interface of the growing ingot with the melt, where the interface remains nearly flat and the etchpit concentration is largely reduced.
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Analysis of the temperature distribution in pulled crystals

TL;DR: In this paper, the time independent equations governing the temperature distribution in a growing crystal are solved to give both axial and radial variations of temperature, and simple single term approximations to the solutions may be used without appreciable loss of accuracy.
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An analysis of factors affecting dislocation densities in pulled crystals of gallium arsenide

TL;DR: In this article, it was shown that the dislocation density at the periphery depends only on the radial temperature gradient in the manner described by Billig, and that this mechanism of lattice misfit may also account for the whole distribution of dislocations in crystals grown under low (≈600 Torr) arsenic pressures.
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The composition of crystals of bismuth silicon oxide

TL;DR: In this paper, BixSiO1.5x+2 with x ∼ 12 can be pulled at rates of about 5 mm h−1 from platinum crucibles in oxidizing atmospheres.