Journal ArticleDOI
The pinch rectifier: A low-forward-drop high-speed power diode
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TLDR
In this article, a junction grid is incorporated beneath the Schottky barrier to pinch off current flow during reverse blocking, which reduces the forward voltage drop from 0.6 to 0.4 V without causing excessive reverse leakage currents.Abstract:
A new concept for reducing the forward voltage drop of Schottky rectifiers without incurring excessive reverse leakage currents is introduced. In this concept, a junction grid is incorporated beneath the Schottky barrier to pinch off current flow during reverse blocking. Experimental results that demonstrate the capability to reduce the forward drop from 0.6 to 0.4 V without incurring an increase in leakage current are presented.read more
Citations
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Journal ArticleDOI
Silicon carbide and diamond for high temperature device applications
TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.
Patent
Semiconductor device having a plurality of parallel drift regions
TL;DR: In this paper, the drift region is formed as a structure having a plurality of first conductive type divided drift regions and second conductive types compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.
Journal ArticleDOI
The future of power semiconductor device technology
TL;DR: Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions, and silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieve by using very large scale integration (VLSI) technology and trench gate regions.
Journal ArticleDOI
Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier
TL;DR: In this paper, a new operating mode for the merged p-i-n/Schottky (MPS) rectifier structure is analyzed, and it is shown that these devices exhibit superior forward-drop and turn-off-speed characteristics.
References
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Journal ArticleDOI
Control of Schottky barrier height using highly doped surface layers
TL;DR: In this article, it was shown that the effective height of a Schottky barrier can be controlled over a wide range using highly doped surface layers formed by low energy ion implantation.