Journal ArticleDOI
The schottky barrier problem
TLDR
The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time.Abstract:
The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made. Some of these approaches and advances are considered in this article.read more
Citations
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Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Journal ArticleDOI
Solar cell contact resistance—A review
Dieter K. Schroder,D.L. Meier +1 more
TL;DR: An overview of metal-semiconductor contacts on solar cells is presented in this article, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport.
Journal ArticleDOI
Composition and chemical state of the ions of aluminium-oxide films formed by thermal oxidation of aluminium
TL;DR: In this article, the chemical composition and the chemical state of thin aluminium-oxide films grown by the dry, thermal oxidation of a bare Al(4-3-1) substrate at a partial oxygen pressure of 1.33×10−4 Pa in the temperature range of 373-773 K were studied using X-ray photoelectron spectroscopy.
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Work function and barrier heights of transition metal silicides
TL;DR: The work function of 13 polycrystalline transition metal silicides was measured by photo-emission in this article, and their values were discussed in relationship to their Schottky barrier heights on n-Si.
Journal ArticleDOI
Surface states and the local electronic structure at surfaces
TL;DR: The surface electronic structure can have important consequences for surface relaxation, reconstruction (including surface defect properties) and reactivity as discussed by the authors, with particular emphasis on atomic-orbital-based methods.
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Surface States and Rectification at a Metal Semi-Conductor Contact
TL;DR: In this article, it was shown that if contact is made with a metal, the difference in work function between metal semi-conductor is compensated by surface states charge, rather than by a space charge as is independent of the metal.
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Theory of Surface States
TL;DR: In this paper, it was shown that virtual or resonance surface states can exist which behave for practical purposes in the same way as the tails of the metal wave functions rather than separate states.