Journal ArticleDOI
The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes
Robert H. Caverly,Gerald Hiller +1 more
TLDR
In this paper, the authors demonstrate that the impedance of the p - i - n diode is definable as a function of frequency and depends on the diode's geometry and electronic properties.Abstract:
The purpose of this paper is to demonstrate that the impedance of the p - i - n diode is definable as a function of frequency and depends on the diode's geometry and electronic properties. The impedance analysis includes the effects of different electron and hole mobilities, making the model suitable for modeling the a.c. impedance of both silicon and gallium arsenide - i - n diodes. The small signal model shows that for frequencies near the inverse of the intrinsic region carrier lifetime, the diode shows either capacitive or inductive reactance, depending on its geometry. The analysis also indicates that p - i - n diodes with certain combinations of geometry and carrier lifetime show a nearly constant resistance and negligible reactance at all frequencies. At high frequencies for p - i - n diodes of any geometry, the reactive component essentially disappears and the impedance is purely resistive. The series equivalent p - i - n diode impedance model is compared with measured impedance vs frequency data for both silicon and gallium arsenide - i - n diodes.read more
Citations
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Proceedings ArticleDOI
SPICE modeling of microwave and RF control diodes
TL;DR: In this article, a SPICE model for the microwave and RF PIN switching diode is presented, which simulates the important I-region charge storage phenomenon and its effect on the PIN diode impedance-frequency characteristic.
Proceedings ArticleDOI
A 94 GHz monolithic switch with a vertical PIN diode structure
TL;DR: In this paper, the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch using a vertical pin diode structure was presented, achieving insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, the circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i and n+ layers.
Proceedings ArticleDOI
Distortion properties of gallium arsenide and silicon RF and microwave switches
TL;DR: In this article, the results of a study on the distortion produced by GaAs and Si RF and microwave switches were presented, which can be used to decide which switch to use for a specific switching application.
Journal ArticleDOI
The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions
TL;DR: In this paper, a quantitative analysis of the impedance spectroscopy of semiconductor heterojunctions was carried out in the presence of interface state continuum at the heterojunction interface.
Journal ArticleDOI
An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance
TL;DR: In this article, an improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented, which allows diode designers to evaluate quickly and accurately the diode impedance.
References
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Journal ArticleDOI
The frequency-dependent impedance of p-i-n diodes
R.H. Caverly,G. Hiller +1 more
TL;DR: In this paper, it was shown that the impedance of a forward-biased p-i-n diode is definable as a function of frequency and depends on the diode's geometry and electronic properties.
Journal ArticleDOI
The small-signal inductive effect in a long P-I-N diode
J.E. Nordman,R.A. Greiner +1 more
TL;DR: In this paper, the small-signal impedance of the forward-biased p-i-n diode has been calculated for a certain range of bias voltages, and it is shown that the intrinsic region can be approximated by a parallel combination of resistance and inductance.
Journal ArticleDOI
Simulation of GaAs p-i-n diodes
Anand Gopinath,H. Atwater +1 more
TL;DR: In this article, GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment and the simulations predict that with a lifetime of the carriers of 10/sup -7/ s, devices that have good i-layer modulation may be built.