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Journal ArticleDOI

The structure, device physics, and material properties of thin film electroluminescent displays

TLDR
In this article, the authors reviewed the device structure, electrical and optical device physics, and the material properties of TFEL displays, focusing on the phosphor layer properties and the radiative recombination phenomenon that is responsible for luminescence.
Abstract
Thin film electroluminescent (TFEL) displays are complex optoelectronic devices with challenging material requirements. The multilayer device structure includes two electrodes (one metallic and one transparent), two insulators, and a semiconducting ‘phosphor’ layer. Each layer has unique electronic and optical properties that must be satisfied for device operation. In this article, we review the device structure, the electrical and optical device physics, and the material properties of TFEL displays. Particular attention is given to the phosphor layer properties and the radiative recombination phenomenon that is responsible for luminescence. The current status of the red, green, blue and white TFEL phosphors is also reviewed, and the current and future applications are discussed.

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Citations
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Journal ArticleDOI

Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications.

TL;DR: This review will provide insight into the relation between crystal chemistry and luminescence for the important class of Ce3+-doped garnet phosphors, and summarize previous research on the structural design and optical properties of garnet phosphate materials to discuss future research opportunities.
Journal ArticleDOI

Luminescent layers for enhanced silicon solar cell performance: Up-conversion

TL;DR: In this paper, the application of rare-earth-doped inorganic materials for achieving external quantum efficiencies greater than unity and enhancing the conversion efficiency of silicon solar cells was examined, and the opportunities for the DC of high-energy solar photons to multiple photons with energy greater than the silicon bandgap were discussed.
Journal ArticleDOI

Phosphors for Solid-State White Lighting

TL;DR: A review of the current needs and key aspects of the conversion process is given in this paper, where the authors describe some currently used families of phosphors and consider why they are suitable for solid-state lighting.
Journal ArticleDOI

White organic light-emitting diodes: Status and perspective

TL;DR: In this paper, the physics of a variety of device concepts that have been introduced to realize white organic light-emitting diodes based on both polymer and small-molecule organic materials are discussed.
Journal ArticleDOI

Enhancement of red spectral emission intensity of Y3Al5O12:Ce3+ phosphor via Pr co-doping and Tb substitution for the application to white LEDs

TL;DR: In this paper, a blue light emitting diode (LED) pumped white LED with yellow emitting (YAG:Ce) phosphor using addition of Pr and Tb as a co-activator and host lattice element, respectively.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI

Surface States and Rectification at a Metal Semi-Conductor Contact

TL;DR: In this article, it was shown that if contact is made with a metal, the difference in work function between metal semi-conductor is compensated by surface states charge, rather than by a space charge as is independent of the metal.
Book

The science and engineering of materials

TL;DR: This paper provided an understanding of the relationship between structure, processing, and properties of materials, and provided a general overview, focusing on mechanical behavior, or focusing on physical properties, by selecting the appropriate topics from this wealth of material.
Journal ArticleDOI

Approximate Self‐Consistent Molecular‐Orbital Theory. V. Intermediate Neglect of Differential Overlap

TL;DR: The Intermediate Neglect of Differential Overlap (INDO) method proposed in this article is an improvement over the CNDO method, in that atomic term-level splittings and unpaired spin distributions are better accommodated.