Journal ArticleDOI
Theory of Internal Photoemission
J. S. Helman,F. Sánchez-Sinencio +1 more
TLDR
In this article, Fowler's hypothesis was extended to deal with the problem of internal photoemission, which leads to the empirical relation between the quantum efficiency and photon energy, which is currently used to interpret hole photo-emission experiments.Abstract:
Fowler's hypothesis commonly used to interpret results of photoemission into the vacuum has been extended to deal with the problem of internal photoemission. This leads to the empirical relation $Y\ensuremath{\propto}{(E\ensuremath{-}{E}_{t})}^{2}$ between the quantum efficiency $Y$ and the photon energy $E$, currently used to interpret hole photoemission experiments. ${E}_{t}$ is the threshold energy for photoemission. Various cases of internal electron and hole photoemission between metals and semiconductors are discussed.read more
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Journal ArticleDOI
On the plasmonic photovoltaic.
TL;DR: A stable, wholly plasmonic photovoltaic device in which photon absorption and carrier generation take place exclusively in the plAsmonic metal, with the TiO2 playing a negligible role in charge carrier production.
Journal ArticleDOI
Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
Giulia Tagliabue,Adam S. Jermyn,Ravishankar Sundararaman,Alex J. Welch,Joseph S. DuChene,Ragip Pala,Arthur R. Davoyan,Prineha Narang,Harry A. Atwater +8 more
TL;DR: The authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance, suggesting the possibility for hot carrier collection without substantial energy losses via thermalization.
Journal ArticleDOI
Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception
S. Muehlbrandt,Argishti Melikyan,T. Harter,K. Kohnle,A. Muslija,P. Vincze,Stefan Wolf,Peter-Jürgen Jakobs,Yuriy Fedoryshyn,Wolfgang Freude,Juerg Leuthold,Christian Koos,Manfred Kohl +12 more
TL;DR: In this article, a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1'μm2 is presented.
Journal ArticleDOI
Photoelectric study of β‐FeSi2 on silicon: Optical threshold as a function of temperature
TL;DR: In this article, the photoelectric properties of several metal/β-FeSi2/Si heterostructures are investigated and it is shown that the photocurrent follows a Fowler's law with a threshold Φ 1 lower than the silicide band gap.
Journal ArticleDOI
Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx
Valery V. Afanas'ev,Michel Houssa,Andre Stesmans,Clement Merckling,Tom Schram,Jorge A. Kittl +5 more
TL;DR: In this paper, it was shown that the oxide gap widening occurs at the VB side of the gap and that the interaction between electron states of O anions plays the dominant role in the gap widening.