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Journal ArticleDOI

Thermally Actuated Latching RF MEMS Switch and Its Characteristics

TLDR
In this article, a thermally actuated latching wideband RF microelectromechanical systems (MEMS) switch is presented, which employs two thermal actuators connected to two thin metal arms which serve as signal lines of coplanar waveguide switch.
Abstract
Here, a new thermally actuated latching wideband RF microelectromechanical systems (MEMS) switch is presented. The switch employs two thermal actuators connected to two thin metal arms which serve as signal lines of coplanar waveguide switch. The actuators pull the thin arms sequentially, and latch the switch. The switch can be actuated on and off by using either short voltage or current pulses. Using a dielectric bridge (nitride) as an interface between the actuators and the thin arms, the RF circuitry is separated from DC actuators, allowing wide-band operation. The switch demonstrates an excellent wideband RF performance with an insertion loss of better than 0.3 dB up to 20 GHz and better than 0.8 dB up to 40 GHz. The return loss and isolation of the switch is better than 20 dB for the entire frequency band. The switch also has a very satisfactory repeatability with better than 0.1-dB variation in insertion loss and less than 1-dB variation in return loss and isolation at 30-dB level up to 6000 times switching cycles. The switch has been also successfully tested for RF power handling capability up to 40 dBm. The proposed switch has very simple RF structure which makes it an ideal candidate to be integrated in the form of more complex circuitry. An application of the proposed switch for a band selection network which is used in multiband transceivers has been presented here.

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Citations
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Journal ArticleDOI

PZT-Based Piezoelectric MEMS Technology

TL;DR: In this article, the authors present recent advancements in the design and fabrication of thin-film (<3μm) lead zirconate titanate (PZT) microelectromechanical system (MEMS) devices.
Journal ArticleDOI

High Power Latching RF MEMS Switches

TL;DR: In this article, the authors proposed a high stroke latching thermal actuator for single-pole-single-throw (SPST), single-pole-Double-Throw (SPDT), Single-Pole-Triple-throw and single-position-triple-thrust (SP3T) switches.
Journal ArticleDOI

Vanadium Oxide Thin-Film Variable Resistor-Based RF Switches

TL;DR: In this article, a series single-pole single-throw (SPST) switches with integrated VO2 thin films were designed, fabricated, and tested, and the overall size of the device is $380~\mu \text{m}times 600~ Âmu  m$.
Journal ArticleDOI

Design and simulation of a novel electro-thermally actuated lateral RF MEMS latching switch for low power applications

TL;DR: In this paper, a lateral electro-thermally actuated latching RF MEMS switch is presented, which consumes a power of <99 mW while transition from off to on state and also consumes 46 mW for 0.3 ms in transition from on to on states.
Journal ArticleDOI

Thermally Actuated SOI RF MEMS-Based Fully Integrated Passive Reflective-Type Analog Phase Shifter for mmWave Applications

TL;DR: In this article, a monolithically integrated reflective-type phase shifter (RTPS) utilizing silicon-on-insulator (SOI) radio frequency (RF) microelectromechanical systems (MEMS) is presented.
References
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MonographDOI

RF MEMS and their applications

TL;DR: In this article, the authors present an integration and packaging for RF MEMS devices, including inductors and capacitors, phase shifters, and relay switches. But they do not discuss how to construct them.
Proceedings ArticleDOI

A high force low area MEMS thermal actuator

TL;DR: In this paper, an array of in-plane micro-fabricated thermal buckle-beam actuators is presented, which can be made within a single released micromachined layer and generate many mN of force.
Patent

Bistable actuation techniques, mechanisms, and applications

TL;DR: In this paper, a deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span.
Journal ArticleDOI

A low-voltage lateral MEMS switch with high RF performance

TL;DR: In this article, an electrothermally actuated lateral contact microrelay for RF applications is presented, which is designed and fabricated on both low resistivity and high-resistivity silicon substrate using surface micromachining techniques.
Journal ArticleDOI

VHF high-power tunable RF bandpass filter using microelectromechanical (MEM) microrelays

TL;DR: In this paper, a VHF RF bandpass filter tuned through the use of MEM microrelays was operated at a 25 W RF power input level, and the filter insertion loss was less than 1 dB at the tuned frequencies of operation.
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