Threshold voltage modeling on nanocrystalline silicon thin film transistors

TLDR: In this paper, an analytical model for calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors using one-dimensional Poisson's equation is presented.

Abstract: This paper presents an analytical model for calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors using one-dimensional Poisson's equation. In this present study, it is assumed that gate insulator-silicon interface traps are uniformly distributed and the channel of the device contains large number of grain boundaries. Further, the effects of the gate insulator thickness and temperature on threshold voltage and hence on transfer characteristics has also been incorporated in this paper. It is observed that scaling down of the insulator thickness reduces the threshold voltage and hence improves the device characteristics at different temperatures and trap densities. The numerical calculations also demonstrate that the effect of the gate insulator thickness is less prominent at high temperature. The results so obtained are compared with the available experimental data which shows a satisfactory match thus justifying the validity of the model.