Journal ArticleDOI
Topics in solid phase epitaxy: Strain, structure and geometry
TLDR
The effects of some experimental parameters on the solid-phase crystallization of amorphous films on single crystals, a process known as Solid Phase Epitaxy (SPE), are examined in this paper.Abstract:
The effects of some experimental parameters on the solid-phase crystallization of amorphous films on single crystals, a process known as Solid Phase Epitaxy (SPE), are examined. Results from a large community of researchers concerning SPE of alloys and compounds, strained films, films in constrained geometries and films with unusual amorphous/crystal interfaces are reviewed. Our present understanding of mechanisms involved in SPE is given, and the implications of the wide range of experimental results are discussed.read more
Citations
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A structural model for the interface between amorphous and crystal line Si or Ge
TL;DR: In this article, a general procedure for building static models of interfaces, which involves a change in phase-specific construction rules at the boundary plane, is outlined, and detailed topologies, bond angle distortions and radial distribution functions for each of the four layers are reported.
Journal ArticleDOI
The effect of the underlying substrate on the crystallization kinetics of dense amorphous solid water films
Zdenek Dohnálek,Gregory A. Kimmel,Ryan L. Ciolli,Kip P. Stevenson,R. Scott Smith,Bruce D. Kay +5 more
TL;DR: In this paper, the authors investigated the crystallization kinetics of thin, dense amorphous solid water films deposited on crystalline ice and Pt(111) substrates and found that the acceleration originates from the absence of the nucleation process on the substrate which serves as a two-dimensional nucleus for the growth of the crystalline phase.
Journal ArticleDOI
Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review
Yao-Jen Lee,Ta-Chun Cho,Shang-Shiun Chuang,Fu-Kuo Hsueh,Yu-Lun Lu,Po-Jung Sung,Hsiu-Chih Chen,Michael I. Current,Tseung-Yuen Tseng,Tien-Sheng Chao,Chenming Hu,Fu-Liang Yang +11 more
TL;DR: In this paper, the authors compared microwave annealing (MWA) and rapid thermal anneeling (RTA) of dopants in implanted Si are compared in their abilities to produce very shallow and highly activated junctions.
Journal ArticleDOI
Pressure relaxation of polystyrene and its comparison to the shear response
Yan Meng,Sindee L. Simon +1 more
TL;DR: In this article, a master curve for pressure relaxation in each pressure regime is obtained based on the time-temperature superposition principle, and time-pressure superposition of the two master curves is found to be applicable when the master curves are referenced to their pressure-dependent Tg.
Journal ArticleDOI
The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers
TL;DR: In this paper, the intrinsic and dopant-enhanced solid phase epitaxy (SPE) data were measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation.
References
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Book
Introduction to Ceramics
TL;DR: In this paper, the authors present a model for the development of the MICROSTRUCTURE in CERAMICS based on phase transformation, glass formation and glass-Ceramics.
Journal ArticleDOI
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
D. J. Eaglesham,M. Cerullo +1 more
TL;DR: It is shown that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free, and the limiting critical thickness of coherent SK islands is shown to be higher than that for 2D growth.
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Thin Films—Interdiffusion and Reactions
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Surfactants in epitaxial growth.
TL;DR: In this article, the role of surface active species (surfactants) in heteroepitaxial growth was investigated and the use of a segregating surfactant was proposed to reduce the surface free energies of A and B and suppress island formation, as demonstrated in the growth of Si/Ge/Si(001) with a monolayer of As.
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Structure analysis of si(111)-7×7 reconstructed surface by transmission electron diffraction
TL;DR: In this article, the atomic structure of the 7 × 7 reconstructed Si(111) surface has been analyzed by ultra-high vacuum (UHV) transmission electron diffraction (TED).