scispace - formally typeset
Journal ArticleDOI

Transient thermal response of power semiconductors to short power pulses

S. Clemente
- 01 Oct 1993 - 
- Vol. 8, Iss: 4, pp 337-341
TLDR
In this article, an alternative model is derived, the limits of its accuracy are estimated, and a correction factor is described for large surges of short time duration, as they are encountered in present day power conditioning systems.
Abstract
Thermal response curves used to calculate the peak junction temperature of power semiconductors are normally derived by experimental identification of the parameters of a known model. Unfortunately the model, developed many years ago, is inappropriate for large surges of short time duration, as they are encountered in present day power conditioning systems. An alternative model is derived, the limits of its accuracy are estimated, and a correction factor is described. A verification of the accuracy of the two methods is also presented. For pulse widths shorter than the thermal transit time, which is in the order of 300 mu s, the peak junction temperature can be more accurately calculated with an expression derived in the present work, which takes into consideration the active volume in which the heat is generated, than with the transient thermal response curve. A correction factor, a function of the width of the pulse, inserted in this equation, further improves its accuracy. >

read more

Citations
More filters
Journal ArticleDOI

Energy dissipation and transport in nanoscale devices

TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI

Energy Dissipation and Transport in Nanoscale Devices

TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI

A review of IGBT models

TL;DR: In this paper, the authors reviewed, analyzed, compared and classified IGBT models into different categories according to mathematical type, objectives, complexity, accuracy and speed, and some problems and trends in IGBT modeling are discussed.
Journal ArticleDOI

Choosing a thermal model for electrothermal simulation of power semiconductor devices

TL;DR: In this article, the effect of the boundary condition representation and the introduced errors on temperature response at the heat source is studied, particularly for large surges of a short time duration, and an analytic model developed by applying an internal approximation of the heat diffusion problem is developed.
Journal ArticleDOI

Transient temperature measurements and modeling of IGBT's under short circuit

TL;DR: In this article, an experimental method is presented to estimate the temperature decay in the IGBT from the saturation current response at low gate-to-source voltage during the cooling phase.
References
More filters
Book

Conduction of Heat in Solids

TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI

Flash Method of Determining Thermal Diffusivity, Heat Capacity, and Thermal Conductivity

TL;DR: In this paper, a high-intensity short-duration light pulse is absorbed in the front surface of a thermally insulated specimen, and the resulting temperature history of the rear surface is measured by a thermocouple and recorded with an oscilloscope and camera.
Journal ArticleDOI

Transient Thermal Response Measurements of Power Transistors

TL;DR: In this article, a one-dimensional model for power transistor cooling is described and the theoretical predictions of the model are shown to be in good agreement for practical applications with three-dimensional computer simulations and experimental results.
Journal ArticleDOI

Three-dimensional transient thermal simulation: application to delayed short circuit protection in power ICs

TL;DR: An analytical solution of the three-dimensional transient thermal diffusion problem is presented for a two-layer structure, together with a simple computer program for the calculation of the solution.