Journal ArticleDOI
Variable‐energy positron‐beam studies of SiO2/Si irradiated by ionizing radiation
TLDR
In this article, the Doppler broadening of annihilation photons was found to be strongly influenced by x-ray irradiation, and the effect was extended homogeneously over the entire oxide layer.Abstract:
Variable‐energy positron‐beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x‐ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.read more
Citations
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Journal ArticleDOI
Characterization of defects in Si and SiO2−Si using positrons
TL;DR: In this article, the positron annihilation spectroscopy (PAS) was used as a non-destructive probe to examine defects in technologically important Si-based structures, including the quality of overlayers, formation and annealing of defects after ion implantation, identification of defect complexes, and evaluation of the distribution of internal electric fields.
Journal ArticleDOI
Defects in electron irradiated vitreous SiO2 probed by positron annihilation
TL;DR: In this article, the positron annihilation technique was applied to 3 MeV electron irradiated vitreous SiO2 (v-SiO2) specimens, and it was found that almost all positrons annihilate from positronium (Ps) states.
Journal ArticleDOI
SiO2 films deposited on Si substrates studied by monoenergetic positron beams
TL;DR: In this article, variable-energy positron beams were used to study SiO2 films grown on Si substrates, and the formation probability of positronium (Ps) was found to be dominated by the annihilation characteristics of positrons.
Journal ArticleDOI
Positron annihilation investigation of porous silicon heat treated to 1000 °C
S. Dannefaer,C. Wiebe,D. Kerr +2 more
TL;DR: Positron lifetime and Doppler broadening spectroscopies were applied to investigate a porous silicon film subjected to heat treatment in an argon atmosphere as discussed by the authors, and the results indicated two distinct electron momentum distributions, one arising from open volume defects and one from pickoff annihilation of positronium at the pore walls.
Journal ArticleDOI
Characterization of SiO2/Si heterostructures by soft x‐ray reflection
TL;DR: Grazing incidence x-ray reflectivity has been used to characterize four as-grown SiO2/Si(100) heterostructures with SiO 2 overlayer thicknesses ranging from about 126 to 1100 A.
References
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Journal ArticleDOI
Profiling multilayer structures with monoenergetic positrons.
TL;DR: The positron implantation profile is shown to possess the shape of a derivative of a Gaussian function, in contrast to the more commonly used exponential profile.
Journal ArticleDOI
Transmission of 1 - 6-keV positrons through thin metal films
Allen P. Mills,Robert Wilson +1 more
TL;DR: In this article, the authors reported measurements of the transmission of 1 - 6-keV energy positrons through films of Al, Cu, and Si up to 3000 AA{} thickness.
Journal ArticleDOI
Variable-energy positron-beam studies of Ni implanted with He.
TL;DR: This investigation demonstrates the capabilities of positron annihilation for nondestructive depth profiling in ion-implanted systems and establishes parallels between the trapping behavior of positrons and that reported elsewhere for hydrogen, thereby augmenting the present level of understanding of the technologically important trapping of hydrogen by the bubbles.
Journal ArticleDOI
SiO2/Si interface probed with a variable‐energy positron beam
TL;DR: The annihilation characteristics of a monoenergetic beam of positrons, after implantation in Si with a 350nm overlayer of SiO2, were measured as a function of mean implantation depth as discussed by the authors.
Journal ArticleDOI
A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beam
TL;DR: In this paper, the authors measured the Doppler broadening profiles of the positron annihilation as a function of incident positron energy and found that the implantation profile of helium is closer to the surface than the calculated one and the presence of dislocations makes the profile shallower.
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