Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure

TLDR: The power-law dependence of the parabolic oxidation rate on the partial pressure of water vapor at all temperatures of the study indicated that the molecular species was not the sole rate-limiting oxidant as discussed by the authors.

Abstract: Chemically vapor deposited silicon carbide (CVD SiC) was oxidized at temperatures of 1000°-1400°C in H2O/O2 gas mixtures with compositions of 10-90 vol% water vapor at a total pressure of 1 atm. Additional experiments were conducted in H2O/argon mixtures at a temperature of 1100°C. Experiments were designed to minimize impurity and volatility effects, so that only intrinsic water-vapor effects were observed. The oxidation kinetics increased as the water-vapor content increased. The parabolic oxidation rates in the range of 10-90 vol% water vapor (the balance being oxygen) were approximately one order of magnitude higher than the rates that were observed in dry oxygen for temperatures of 1200°-1400°C. The power-law dependence of the parabolic oxidation rate on the partial pressure of water vapor at all temperatures of the study indicated that the molecular species was not the sole rate-limiting oxidant. The determination of an activation energy for diffusion was complicated by variations in the oxidation mechanism and oxide-scale morphology with the partial pressure of water vapor and the temperature.