Paralinear Oxidation of CVD SiC in Water Vapor
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In this article, the long-term degradation rate of CVD SiC is determined by the volatility of the silica scale, which is observed as the water vapor oxidized the SiC and simultaneously volatilized the scale.Abstract:
The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.read more
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References
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W. M. Kays,J. H. Whitelaw +1 more
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General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
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Linear regression in astronomy. II
TL;DR: A wide variety of least-squares linear regression procedures used in observational astronomy, particularly investigations of the cosmic distance scale, are presented and discussed in this article, where a formula for the intercept offset between two parallel data sets, which propagates slope errors from one regression to the other, and a generalization of the Working-Hotelling confidence bands to nonstandard least squares lines.