Journal ArticleDOI
Velocity saturation in short channel field effect transistors
W. Müller,I. Eisele +1 more
Reads0
Chats0
TLDR
In this article, the high electric field transport of short channel MOS transistors has been investigated and the saturation value of the drift velocity in the inversion channel is close to the bulk value of 107 cm sec−1.About:
This article is published in Solid State Communications.The article was published on 1980-05-01. It has received 21 citations till now. The article focuses on the topics: Velocity saturation & Saturation velocity.read more
Citations
More filters
Journal ArticleDOI
High‐field drift velocity of electrons at the Si–SiO2 interface as determined by a time‐of‐flight technique
J. A. Cooper,D. F. Nelson +1 more
TL;DR: In this paper, the time-of-flight of discrete charge packets introduced by a pulsed laser was observed at the interface between (100) silicon and thermally grown silicon dioxide as a function of both tangential and normal electric fields.
Journal ArticleDOI
High-field drift velocity of electrons in silicon inversion layers
A. Modelli,S. Manzini +1 more
TL;DR: In this article, the drift velocity on electric field for electrons in n-type silicon inversion layers is determined from the d.c. drain-conductance measurement of polysilicon resistive-gate field effect transistors.
Journal ArticleDOI
Image potential in scanning transmission electron microscopy
TL;DR: In this paper, the role of the image potential in electron energy loss spectroscopy (EELS) of fast electrons commonly used in scanning transmission electron microscopy travelling near a surface is studied.
Journal ArticleDOI
Analytical device model for submicrometer MOSFET's
TL;DR: In this article, a drain current model applicable to deep submicrometer MOSFETs is proposed, which includes the velocity overshoot effect by using the extended-drift-diffusion (EDD) model.
Journal ArticleDOI
Process and device design of a 1000-V MOS IC
T. Yamaguchi,S. Morimoto +1 more
TL;DR: In this paper, a high-voltage MOS device and logic N-MOS circuits have been integrated on the same chip by using a silicon-gate isoplanar process.
References
More filters
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
F. F. Fang,A. B. Fowler +1 more
TL;DR: In this article, the electron drift velocity was measured for different surface orientations, substrate dopings, and ambient temperatures from 4.2° to 300°K, and was found to saturate for fields greater than a few times 104 V/cm, depending upon the low field mobility.
Journal ArticleDOI
Transport of hot carriers in semiconductor quantized inversion layers
TL;DR: In this paper, the authors discuss the role played by the electric field in the transport of warm and hot carriers in quantized inversion layers, and compare the available experimental data.
Journal ArticleDOI
Review of experimental aspects of hot electron transport in MOS structures
TL;DR: In this paper, a review of carrier mobility measurements in silicon inversion layers is given with special emphasis on high-field phenomena, including conductivity, mobility, Shubnikov-de Haas effect, the warm electron coefficient β and the saturation drift velocity.
Journal ArticleDOI
Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands
TL;DR: In this paper, a Monte Carlo calculation of the drift velocity of hot electrons in quantized silicon inversion layers for (100)-oriented surface has been performed by considering the three lowest subbands.
Related Papers (5)
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
F. F. Fang,A. B. Fowler +1 more
High‐field drift velocity of electrons at the Si–SiO2 interface as determined by a time‐of‐flight technique
J. A. Cooper,D. F. Nelson +1 more