Patent
Vertical MOSFET with reduced turn-on resistance
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TLDR
In this article, a vertical MOSFET structure with a drain consisting of a high conductivity region and a low conductivity area is proposed to minimize the device turn-on resistance without degrading the device breakdown voltage.Abstract:
A vertical MOSFET structure which includes a drain which comprises a high conductivity region and a low conductivity region. The high conductivity drain region is contoured so as to minimize the device turn-on resistance without degrading the device breakdown voltage.read more
Citations
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References
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Patent
Power field effect transistors
TL;DR: In this paper, a power metaloxide-semiconductor field effect transistor (MOSFET) with high switching speed capabilities is shown, which is facilitated by a narrow channel length defined by the difference in lateral diffusion junctions of the P substrate and N source diffusions.
Patent
Field effect transistor with reduced series resistance
TL;DR: In this article, a field effect transistor with an additional highly doped source region contiguous to the source region and protruding into the channel having a shape approximately conforming to the shape of the depletion layer was proposed to reduce the series resistance from the source to the pinch-off point.
Patent
Field effect transistor with a short channel length
TL;DR: In this paper, a field effect transistor with a MIS gate arrangement having a source and drain formed in a semiconductor body and including an electrically conductive region additionally provided which lies beneath the source zone and which has a conductivity opposite to and/or electrical conductivity which is higher than the semiconducting body which surrounds the zone is presented.
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Method of making a high current Schottky barrier device
TL;DR: In this article, a heavily doped N type conductivity substrate has a lightly doped P-type conductivity epitaxial layer with a centrally located buried layer diffused therein and a second lightly D-type semiconductive layer grown on the first layer.