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XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
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In this article, the incorporation of rare gas into a-Si: H produced by the reactive sputtering method is studied with XPS measurements, and it is shown that the amount of neon incorporated in an aSi:H film prepared in a 93% Ne+7% H2 gas mixture decreases monotonically from 7 atomic % until it becomes undetectable, as the total pressure is increased from 2 Pa to 30 Pa.Abstract:
The incorporation of rare gas into a-Si: H produced by the reactive sputtering method is studied with XPS measurements The amount of neon incorporated in an a-Si: H film prepared in a 93% Ne+7% H2 gas mixture decreases monotonically from 7 atomic % until it becomes undetectable, as the total pressure is increased from 02 Pa to 30 Pa A-Si: H films produced under the same Ne partial pressure without H2 contain ca 17 times as much amount of Ne atoms as those prepared with H2read more
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Surface analysis: x-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary ion mass spectrometry
TL;DR: Oda, C. E., Ingle, J. D., Randiesome, J., Aston, S. R., and Oster, 0.1.
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Surface properties of electrodeposited a-Si:C:H:F thin films by X-ray photoelectron spectroscopy
TL;DR: In this article, surface properties of amorphous silicon thin films containing hydrogen, flourine and carbon obtained from hydrofluosilicic acid and ethylene glycol using the electrodeposition method are reported as a function of current density and deposition time.
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A choice of the optimum density of ion bombardment by ion-assisted physical vapour deposition of films
TL;DR: In this article, a model allowing the quantitative estimation of the optimum ion current density required to produce a film with a maximum density is proposed, and the average energies per deposited atom for some elemental and compound film materials are given.
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Insert gas entrapment in films produced by ion-assisted physical vapour deposition processes
G.I. Grigorov,I.N. Martev +1 more
TL;DR: In this paper, the atomic concentration ratio in the film (sorption ratio) γ = [Ar]/[Ti] as a function of the dimensionless quantity c ion, which is the relative density of the ion flux (ratio of ion flux density to condensing material atom flux density).
Journal ArticleDOI
Structural and morphological studies of electrodeposited amorphous silicon thin films
TL;DR: Amorphous silicon thin films obtained from hydrofluosilicic acid using the electrodeposition method are analyzed for structure and morphology in this paper using the data from IR spectroscopy.