Instituto Tecnológico de Aeronáutica

About: Instituto Tecnológico de Aeronáutica is a education organization based out in São José dos Campos, Brazil. It is known for research contribution in the topics: Turbulence & Finite element method. The organization has 2062 authors who have published 3808 publications receiving 45532 citations. The organization is also known as: ITA & Instituto Tecnologico de Aeronautica.

Experimental demonstration of a unidirectional reflectionless parity-time metamaterial at optical frequencies

Abstract: Invisibility by metamaterials is of great interest, where optical properties are manipulated in the real permittivity– permeability plane. However, the most effective approach to achieving invisibility in various military applications is to absorb the electromagnetic waves emitted from radar to minimize the corresponding reflection and scattering, such that no signal gets bounced back. Here, we show the experimental realization of chip-scale unidirectional reflectionless optical metamaterials near the spontaneous parity-time symmetry phase transition point where reflection from one side is significantly suppressed. This is enabled by engineering the corresponding optical properties of the designed paritytime metamaterial in the complex dielectric permittivity plane. Numerical simulations and experimental verification consistently exhibit asymmetric reflection with high contrast ratios around a wavelength of of 1,550 nm. The demonstrated unidirectional phenomenon at the corresponding parity-time exceptional point on-a-chip confirms the feasibility of creating complicated on-chip parity-time metamaterials and optical devices based on their properties.

Kinetics of phase change

Abstract: The kinetic model for change of phases developed by M. Avrami at the end of the thirties has been used to describe the temporal behavior of phase changes. Until today this model is studied and adapted to include broader hypotheses. However, the mathematical format presented by M. Avrami is difficult to be understood by beginners. The purpose of this work is to clarify the mathematical treatment of Avrami's work, going straightforward to the arguments that led to his main results.

Bandgap engineering of two-dimensional semiconductor materials

Abstract: Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.