scispace - formally typeset
Search or ask a question

How does most recent FinFET design differ from ones 5 years ago? 


Best insight from top research papers

In recent years, there have been advancements in FinFET design compared to designs from five years ago. These advancements include the introduction of novel circuit designs and layout considerations, as well as the utilization of FinFET's second gate to implement circuits with fewer transistors . Additionally, the use of FinFET technology has been shown to mitigate the short channel effects of conventional CMOS designs, resulting in improved performance and reduced power consumption in comparators . Furthermore, a new design methodology has been developed to optimize FinFET devices for electrical ESD parameters, allowing for the fulfillment of design constraints while meeting ESD requirements . Finally, extensive simulations have been conducted to evaluate the performance of different types of FinFETs, such as SOI and BOI FinFETs, in digital circuits, demonstrating comparable performance in terms of self-heating effects under low voltage bias .

Answers from top 5 papers

More filters
Papers (5)Insight
The provided paper does not provide information on the most recent FinFET design compared to ones from 5 years ago.
The provided paper does not mention any specific differences between the most recent FinFET design and ones from 5 years ago. The paper focuses on a new design methodology for FinFET devices to meet IC-level ESD targets.
The provided paper does not provide information on the most recent FinFET design or how it differs from designs from five years ago.
Book ChapterDOI
01 Jan 2011
115 Citations
The provided paper does not mention any specific information about the most recent FinFET design or how it differs from designs from five years ago.
The paper does not provide information on how the most recent FinFET design differs from ones 5 years ago.

Related Questions

How will be the Fintech evolve in future?5 answersThe Fintech industry is expected to evolve in the future by leveraging new technologies such as Big Data, the Metaverse, and blockchain. Big data enables financial institutions to gather and analyze large amounts of data, leading to better customer understanding and smarter decision-making. The Metaverse allows businesses to offer virtual goods and services, expanding their operations and providing customers with more options. Blockchain technology has the potential to make the banking industry more accessible, efficient, secure, and user-friendly. Scenario planning and the theory of assemblage can be used to gain insights into the long-term changes in the fintech industry. The fintech revolution has already brought benefits to consumers, including enhanced accessibility, convenience, and personalized experiences. The future of the fintech industry will be digital, with machines operating autonomously and disruptive technologies challenging traditional business models.
How does most recent FinFET design differ from a conventional planar MOSFET ?5 answersFinFET design differs from a conventional planar MOSFET in several ways. FinFETs are non-planar devices that have a fin-shaped channel instead of a flat channel like MOSFETs. This allows for better control of the gate over the channel, reducing sub-threshold leakage and improving short channel effects (SCE) control. Additionally, FinFETs have high sub-threshold slope, high current drive strength, low dopant-prompted variations, and decreased power dissipation, making them suitable for low-power and high-performance circuits. In terms of scaling, FinFETs offer better scalability and improved performance metrics in the ultra-nanoscale regime. Furthermore, FinFETs can be enhanced by incorporating air-trench-isolation (ATI) and air-spacer between gate and source/drain (S/D) to further improve DC and RF performance. Overall, FinFETs provide a viable alternative to MOSFETs for future technology nodes, offering improved performance, reduced power consumption, and better control over leakage power.
What are the latest statistics on the evolution of financial innovations?5 answersFinancial innovation has been a significant topic in the research community, driven by technological advancements and the modernization of products and services. It has led to changes in financial firms' processes, organizational structures, and the creation of complex financial instruments and secondary markets. Studies have shown that financial innovation is associated with faster bank growth, but also higher bank fragility and worse bank performance during crises. Small firms have been found to be more innovative than larger peers, with enhanced long-term profitability. Financial innovation, particularly in the fintech sector, has had a positive and significant impact on the profitability of the banking system in the long run. The development of financial ecosystems and the digital economy have played a strategic role in driving financial innovations. These trends have prompted the emergence of new business models and the development of the financial market infrastructure.
How does TSMC FinFET differ from normal FinFET ?5 answersTSMC FinFET differs from normal FinFET in several ways. Firstly, TSMC FinFET addresses the problems of large gate-to-channel leakage currents and increased computational power that are present in traditional MOSFETs and CMOS designs. Secondly, TSMC FinFET utilizes Artificial Neural Networks to estimate the channel widths and lengths, allowing for more accurate determination of the ID current in circuits designed with FinFET elements. Additionally, TSMC FinFET can have multiple working modes by connecting the various gates, providing flexibility in voltage and current requirements. Furthermore, TSMC FinFET outperforms CMOS designs in terms of power consumption, control over the gate, and extensibility. Lastly, TSMC FinFET can be used as a magnetic device to detect vertical magnetic fields, offering potential applications in sensing and measurement.
How has the design of inverters evolved over time?5 answersThe design of inverters has evolved over time to meet the demands of various applications. Inverter modules with two stages have been developed, achieving high peak efficiency, low crest factor, and low vTHD. Grid-connected inverters have also seen significant improvements in terms of efficiency, size, weight, and reliability, leading to lower production costs. Multilevel inverters have gained attention for high power applications, offering advantages such as voltage sharing and better voltage waveforms with reduced harmonic content. A new concept of switching with reduced number of switches and batteries has been proposed to simplify the complexity of multilevel inverters. In the field of organic electronic circuits, inverters based on organic electrochemical transistors have been designed to operate at low supply voltages while offering high voltage gain and larger output voltage windows.
What will be the future of fintech?4 answersThe future of fintech is expected to be shaped by technological advances and disruptive innovations in the financial industry. Fintech has the potential to revolutionize traditional financial services and bring about significant changes in areas such as investment banking, digital payments, lending, wealth management, and blockchain technology. Fintech offers opportunities for improved operational effectiveness, risk management, and enhanced customer experiences. It is anticipated that investment banking practices could incorporate fintech solutions to support their growth in the global financial market. The use of advanced technologies like blockchain, artificial intelligence, and big data analytics will play a crucial role in the development of fintech. Fintech is also expected to transform online payments, peer-to-peer lending, robo-advice, and other financial services, making them more convenient, secure, and accessible. Overall, fintech has the potential to bring about significant transformations in the financial industry, offering new opportunities and challenges for businesses, regulators, and academics.

See what other people are reading

What are the negative impact of Hyperloop in terms of for Employees and potential employees?
5 answers
The negative impacts of Hyperloop on employees and potential employees include potential job losses due to closures of nearby stores and commercial areas, as seen in the analysis of Hypermarket closures. The closure of Hypermarkets led to a decrease in employment within a radius of 0 to 3km, resulting in a reduction of 1,374 jobs. Additionally, the employment effect analysis highlighted a decrease in employment by 452 people within a radius of 0 to 1km due to the closure of stores, impacting existing and new stores in the area. These findings suggest that the implementation of Hyperloop systems may have adverse effects on local employment opportunities and job stability for individuals in the vicinity of Hyperloop stations or routes.
What is a meander in SNSPD fabrication?
5 answers
A meander in Superconducting Nanowire Single Photon Detector (SNSPD) fabrication refers to a specific pattern of nanowires crucial for detector performance. Meanders are created by patterning ultra-thin superconducting films into intricate, repeated structures like loops or bends. These meander structures are essential for achieving high-performance SNSPDs, enabling efficient photon detection. Meanders are designed with uniform line widths to ensure consistent functionality, with critical parameters like critical temperature (Tc) and critical current (Ic) being key indicators of detector quality. The meander patterns are carefully crafted to detect single photons effectively at specific wavelengths, showcasing the precision and complexity involved in SNSPD fabrication. Additionally, variations in meander design, such as circular meanders, are explored to optimize detector efficiency and reduce costs.
Why engineer stress strain is more widely used in applications?
5 answers
Engineer stress-strain analysis is widely used in applications due to its relevance in various fields. High tensile stress silicon oxide films are strategically placed in transistor architectures to induce strain without compromising integrity. In pipeline projects, strain-based design is crucial for challenging environments, driving research and development efforts to ensure integrity and cost-effectiveness. The Stress-Strain Concept aids in retrieving ergonomic knowledge, linking objective stress from work demands to individual strain, emphasizing the importance of humane aspects in work systems. Stress-strain analysis methodologies like finite elements and distinct elements algorithms are powerful tools for accurately analyzing stress redistribution in the ground during underground excavations. The comprehensive nature and applicability of stress-strain analysis make it a prevalent choice in engineering applications.
What is the leakage power of 12nm transistor?
5 answers
The leakage power of a 12nm transistor is a critical factor in determining power dissipation in CMOS circuits as technology scales down. In the context of 65nm and 90nm processes, different strategies have been explored to address leakage issues. For instance, in a 65nm technology, a low-power, high-speed SRAM macro was designed with reduced leakage to 12 μA/Mb at 0.5V retention voltage. Similarly, in a 90nm Bipolar-CMOS-DMOS process, wafer edge yield loss was attributed to Metal-1 to gate leakage in LDMOS transistors, prompting process optimizations to enhance production yield by 5-10%. Understanding and mitigating leakage mechanisms through device and circuit techniques are crucial for reducing power dissipation in deep sub-micron regimes.
What is the leakage power of 12nm node transistor?
5 answers
The leakage power of a 12nm node transistor is a critical concern due to the significant impact of leakage current on power dissipation in CMOS circuits as technology scales down. Various techniques have been explored to reduce leakage power consumption, such as gate leakage compensation methods and sleep transistor clustering and sizing methodologies. Research has shown that optimizing power dissipation through transistor sizing and virtual supply node adjustments can lead to substantial improvements in leakage power, with up to 22% reduction in leakage current compared to previous designs. Therefore, advancements in transistor design and power-gating strategies are essential to mitigate the effects of leakage power in 12nm node transistors and enhance overall system performance.
How does the presence of impurities affect dark current simulation in InAsSb?
5 answers
The presence of impurities, such as direct doping with Si, significantly impacts dark current simulation in InAsSb-based detectors. Direct impurity doping into quantum dots (QDs) in a quantum dot solar cell (QD SC) reduces dark current by inhibiting recombination rates, as shown in experiments and simulations. Additionally, in nBn structures utilizing InAsSb absorber layers, the doping density of the barrier layer plays a crucial role in reducing dark current, with lower doping densities leading to enhanced sensitivity and substantial dark current reduction compared to previous structures. Furthermore, simulations on InAsSb detectors reveal that the bulk leakage component dominates the dark current, with the unipolar barrier effectively blocking current flow in the bulk and along the surface, showcasing the impact of impurities on dark current behavior.
How to determine the theoretical specific capacitance of the metal oxides?
5 answers
The theoretical specific capacitance of metal oxides can be determined through various methods outlined in the provided research contexts. One approach involves synthesizing Mo-doped hydroxide zinc carbonate material on a foam Ni surface, which exhibited a specific capacitance of 698.9 F g-1 in 1.0 mol L-1 KOH, showing a significant increase compared to the undoped sample. Additionally, the capacitance characteristics of metal-oxide-semiconductor structures can be studied theoretically, with steady-state capacitance reaching saturation values at intermediate gate bias levels. Accurate modeling of electronic devices based on strongly correlated electron materials, such as metal-insulator-correlated oxide structures, involves numerical integration of the Poisson equation and calculations using DMFT to understand charge density and produce C-V curves. Furthermore, a proposed model for MIS devices includes bias and frequency-dependent conductance to accurately determine oxide capacitance and thickness.
What is what?
5 answers
The provided contexts cover diverse topics such as semiconductor manufacturing, fault analysis in automatic machines, power device structures, sulfide preparation methods, and catalyst systems. These contexts discuss processes ranging from cleaning methods for fine silicon patterns, fault diagnosis in automatic machines using digital simulation, power device structures with local current barrier layers, preparation methods for pattern size tunable sulfides, to catalyst systems for Fluoxastrobin synthesis. Each context presents unique technological advancements, such as improving pattern formation in semiconductors, enhancing fault diagnosis accuracy, optimizing power device performance, controlling sulfide morphology, and developing efficient catalyst systems for chemical synthesis. These innovations collectively contribute to various fields, showcasing advancements in materials science, semiconductor technology, fault analysis, and chemical synthesis.
What are the most effective electrical shock prevention methods for industrial workers?
4 answers
The most effective electrical shock prevention methods for industrial workers include the use of advanced devices like electric shock prevention systems with electric field absorption shielding units and protection triggers. Additionally, implementing high-voltage DC systems with control circuits and determining units to monitor and control current flow can significantly reduce the risk of electric shocks. Moreover, the development of dual-arm collaborative robotic systems for high-voltage live work, equipped with human-computer interfaces and teleoperation functions, enhances worker safety by allowing remote operation and automation of tasks, thereby reducing labor intensity and ensuring safety during operations. Understanding electrical safety risks, the effects of electric current on the human body, and implementing appropriate protection measures are crucial for maintaining safe working conditions in industrial settings.
What is application or daily use of adder and subtractor?
5 answers
Adder and subtractor circuits play a crucial role in digital circuits for performing arithmetic operations like addition and subtraction. These circuits are essential components in processors, where the Arithmetic Logic Unit (ALU) utilizes them for executing mathematical functions. In the realm of quantum-dot cellular automata (QCA), novel adder/subtractor designs have been proposed, leveraging the benefits of quantum technology for efficient and cost-effective computing systems. Additionally, the Universal Verification Methodology (UVM) is employed for verifying the functionality of adder-subtractor circuits, offering automation and ease of building verification environments. Overall, adder and subtractor circuits find widespread application in daily computing tasks, ensuring accurate and reliable arithmetic calculations in various digital systems.
What's the correlation of field plate dielectric and TDDB of GaN?
5 answers
The correlation between field plate dielectric and Time-Dependent Dielectric Breakdown (TDDB) of GaN devices is crucial for optimizing their performance. Studies have shown that the mechanical stress effect of the field-plate dielectric film significantly impacts the electric characteristics of GaN-based devices, affecting isolation leakage and gate leakage currents. Additionally, the design of field plate structures, along with the choice of dielectric materials, plays a vital role in enhancing breakdown voltage and reducing dynamic Ron ratio in GaN/AlGaN/GaN HEMTs. Furthermore, the selection of dielectric materials based on their permittivity and critical field strength can predict the performance of field plates in GaN-based Schottky barrier diodes, influencing breakdown behavior and optimization criteria. Incorporating high-k dielectric passivation underneath field plates has been shown to improve breakdown properties in GaN p-n junction diodes, reducing electric field concentration and enhancing breakdown voltage.