Showing papers on "Diode published in 1969"

Large-signal analysis of a silicon Read diode oscillator

Abstract: This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtained for equations describing carrier transport, carrier generation, and space-charge balance. The solutions describe the evolution in time of the diode and its associated resonant circuit. Detailed solutions are presented of the hole and electron concentrations, electric field, and terminal current and voltage at various points in time during a cycle of oscillation. Large-signal values of the diode's negative conductance, susceptance, average voltage, and power-generating efficiency are presented as a function of oscillation amplitude for a fixed average current density. For the structure studied, the largest microwave power-generating efficiency (18 percent at 9.6 GHz) has been obtained at a current density of 200 A/cm2, but efficiencies near 10 percent were obtained over a range of current density from 100 to 1000 A/cm2.

Physics of Semiconductor Devices

Abstract: Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-Transfer Devices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index.

Isolation of junction devices in GaAs using proton bombardment

Abstract: Proton bombardment has been used to convert both p- and n-type GaAs into high resistivity material. It will be shown that this technique is useful for isolating junction devices and fabricating arrays. The average carrier concentration in the bombarded layer is less than 1011/cm3, and the layer thickness is about one micron for every 100 keV of proton energy. These layers are apparently unaffected by a 16 hr anneal at 300°, and only slightly affected at 400°. Using this technique, we have isolated islands of n-type GaAs on a semi-insulating substrate, separated p-n junctions on an n-type substrate, and suppressed edge breakdown in Au-GaAs Schottky barrier diodes.

Filamentary conduction in semiconducting glass diodes

Abstract: Electrical switching in thin‐film As2SeTe2 semiconducting glass diodes with thin‐film electrodes has been studied. The formation of a liquid phase and what appear to be conducting filaments have been observed and recorded. Current densities > 104 A cm−2 have been estimated in the filaments.

The silicon diode array camera tube

Abstract: A new electronic camera tube has been developed for Picturephone® visual telephone applications; with minor modifications it should also be suitable for conventional television systems. The image sensing target of the new camera consists of a planar array of reversed biased silicon photodiodes which are accessed by a low energy scanning electron beam similar to that used in a conventional vidicon. This paper presents a description of the operating principles and an analysis of the sensitivity and resolution capabilities of the new silicon diode array camera tube. We also give the detailed experimental results obtained with the tubes. The gamma of a silicon diode array camera tube is unity and its spectral response is virtually uniform over the wavelength range from 0.45 to 0.90 micron with an effective quantum yield greater than 50 percent. For a 13.4 millimeter square target the silicon diode array camera tube's sensitivity is 20 μamp foot-candles of faceplate illumination with normal incandescent illumination or 1.3 μamp per foot-candle with fluorescent illumination; with a center-to-center diode spacing of 15 micron it's modulation transfer function is greater than 60 percent for a spatial frequency of 14 cycles per millimeter. Typical dark currents for a 13.4 millimeter square target are in the range of 5 to 50 nanoamperes.

New fluoride compounds for efficient infrared‐to‐visible conversion

Abstract: Efficient infrared‐to‐visible conversion by Yb3+–Er3+ and Yb3+–Ho3+ ions in BaLuF5 and BaYF5 is reported. When pumped by radiation from a Si–GaAs diode, the power conversion efficiency for green emission from BaYF5:Yb3+, Er3+ is equal to that for green emitting GaP diodes.

EXTENSION OF LASER HARMONIC‐FREQUENCY MIXING TECHNIQUES INTO THE 9 μ REGION WITH AN INFRARED METAL‐METAL POINT‐CONTACT DIODE

Abstract: Laser harmonic-frequency mixing techniques extended into IR with IR metal-metal point contact diode

A technique for directly plotting the inverse doping profile of semiconductor wafers

Abstract: A new technique for plotting doping profiles of semiconductor wafers is described. This technique involves driving a Schottky diode deposited on the surface with a small constant RF current (a few hundred microamperes at 5 MHz). The depth of the depletion layer is varied by changing the dc bias, but this is the only role of the dc voltage. The inverse doping profile n-1(x) is obtained by monitoring the voltage across the diode at the fundamental frequency, which is proportional to the depth x, and the second harmonic voltage, which is proportional to n-1. This type of plotter has the advantages of simplicity, high resolution (limited only by the Debye length in most cases), immediate results, and economy.

Optical semiconductor device

Abstract: An optical semiconductor device comprises a metal supporting member having a mounting stem, a flat head on one end of the stem and a hub on the head. The hub has an end surface and a peripheral surface. A plurality of electroluminescent semiconductor diodes are mounted in spaced relation on the peripheral surface of the hub so that the supporting member is one terminal of each of the diodes. A terminal wire extends through and is insulatingly supported on the head of the supporting member. The terminal wire is electrically connected to each of the diodes so as to be the other terminal of the diodes. The diodes are all positioned so that they are adapted to emit light in the same direction away from the head of the supporting member. An additional electroluminescent semiconductor diode may be mounted on the end surface of the hub and electrically connected to the supporting member and the terminal wire. The additional diode is also adapted to emit light in the same direction as the other diodes.

Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes

Abstract: An appreciable difference is shown to be expected to exist between the experimentally measured Richardson constant and the ‘ideal’ Richardson constant associated with the flux of a Maxwellian distribution of carriers in a semiconductor. The equality which must exist between the Richardson constant for the forward and reverse characteristics is discussed. The semiconductor charge carrier energy—wave vector relationship rather than that of the metal is shown to be dominant because it controls the cone of acceptance for carriers incident on the barrier from the metal side. The effective mass in the ideal Richardson constant for T-F emission is shown to be the same as that for thermionic emission. This mass, which is associated with the E - k relationship transverse to the direction of current flow, can be considerably different from the tunneling effective mass which is the effective mass component in the direction of the current flow.

Circuits for High Efficiency Avalanche Diode Oscillators

Abstract: This paper describes and analyzes the circuits which have been used successfully for TRAPATT oscillator studies. The results lead to a better understanding of the TRAPATT oscillator and yield a simple model of the oscillator which is useful for circuit design. The circuit characteristics of an experimental TRAPATT oscillator are determined from measurements on the circuits and from equivalent circuit model calculations. The following conclusions can be drawn from the analysis. First, the avalanche diode requires sufficient capacitance near the diode to sustain the high-current state required for TRAPATT operation. Secondly, at a distance from the diode corresponding to approximately one half-wavelength at the TRAPATT frequency the transmission line containing the diode should be terminated by a low-pass filter. The function of the filter is to pass the TRAPATT frequency and to provide a shorting plane for the harmonics of that frequency. Finally, on the load side of the filter, tuning for the TRAPATT frequency is required. The model of the circuit described above suggests a simple explanation of the diode-circuit interaction in a TRAPATT oscillator. Simplified waveforms suggested by the model have been used to calculate power out-put, efficiency, dc voltage change, and RF impedance for the oscillator. The results agree within a few percent with those obtained for an experimental oscillator. An important conclusion of the analysis is that the high-efficiency operation of avalanche diodes at frequencies in the UHF range can be explained by the TRAPATT theory, even though the trapped-plasma or low-voltage state may last only 1/20th of the oscillation period.

Forward current—Voltage and switching characteristics of p + -n-n + (epitaxial) diodes

Abstract: The forward-biased current-voltage and forward-to-reverse biased switching characteristics of p+-n-n+epitaxial diodes are investigated. The manner in which the n-n+junction affects the flow of injected minority carriers in the epitaxial region is characterized by a leakage parameter a. Experimentally, for diodes with epitaxial film widths much less than a diffusion length, a "box" profile accurately describes the injected minority carriers in the n region. The current is found to increase with increased epitaxial width at a fixed bias. A general switching expression for epitaxial diodes is presented and the validity of the expression is shown experimentally. The experimental values of a, determined independently from the current-voltage and switching characteristics, are in good agreement and show that the leakage of the high-low junction is dominated by the recombination of minority carriers in the n-n+space-charge region.

Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers

Abstract: In the presence of an interfacial layer and semiconductor surface states, a Schottky barrier height φb decreases with increasing electric field E at the surface of the semiconductor. If the semiconductor doping concentration Nd is uniform throughout the depletion region and if [ (qNd/e) (dφb/dE)−E] [ (d2φb/dE2) (dE/dV) ]≪1, where V is the applied voltage and e is the semiconductor permittivity, the slope of the (capacitance)−2 vs voltage relationship is constant and can be interpreted to give Nd. The voltage intercept of the relationship yields an apparent barrier height φa related to the true barrier φb by φa=φb−E (dφb/dE) + (qNd/2e) (dφb/dE)2, where q is the electron charge. From the measured variation of φa with Nd and one absolute measure of φb at one value of Nd, φb(E), and dφb(E)/dE may be deduced. From dφb(E)/dE the surface state density as a function of energy in the bandgap and the minimum value of interface thickness divided by relative interface permittivity can be obtained. Using the data of Archer and Atalla for vacuum cleaved Au‐Si diodes to illustrate our method, the surface state density is found to peak at a value of ∼2×1014 cm−2·eV−1 at about 0.83 below the conduction band and the minimum value of interface thickness divided by relative dielectric constant is found to be of the order of 5 A. Criteria are given which show how Schottky diode capacitance‐voltage data may be further used, in conjunction with photoelectric barrier measurements, to detect the presence of deep lying impurities or the penetration of surface state charge into the body of the semiconductor.

Microwave and millimeter wave hybrid integrated circuits for radio systems

Abstract: Hybrid integration of microwave and millimeter wave circuits is essential for achieving future communication objectives in radio systems. Hybrid integrated circuits are circuits which are manufactured on a single planar substrate. Passive elements are fabricated by partial metallization of the substrate; active devices are inserted by bonding semiconductor diodes or bulk devices to the metal conductors. We discuss the electrical properties of passive line elements on insulating substrates. We also compare the design formulas given with measurements made at 30 GHz, and present the results obtained at 30 GHz with wideband transitions from waveguide to microstrip and the measurements obtained with microstrip IMPATT oscillators and high order varactor multi-pliers in the same frequency range. There are advantages of scaling for building hybrid integrated circuits which we discuss. Oversize models can be built and tested in a relatively short time and substantial savings in turnaround time, required man-power, and cost can be achieved.

Write once read only store semiconductor memory

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

A method for heat flow resistance measurements in avalanche diodes

Abstract: Avalanche transit time oscillators are operating at power densities approaching 106W/cm2, unprecedented in semiconductor device history. At such power densities, heat flow resistance problems at the interface between the flip-chip mounted silicon chips and the metal substrate, as well as between the package and the heat sink, are extremely critical. This paper describes a new, nondestructive and accurate method of measuring the heat flow resistance between junction and heat sink by utilizing the temperature dependent breakdown voltage V b (T) as a conveniently built-in temperature sensor. Variations in junction temperature ΔT with power ΔP= V b ΔI are, therefore, related to variations in breakdown voltage ΔV b with current ΔI resulting in a contribution to the electrical small signal resistance of the diode. This thermal resistance contribution R th can be separated readily from spreading and space charge resistance R ap and R sc because of the frequency dependence of R th (ω). Furthermore, the frequency dependence of R th (ω) allows the separation of heat flow resistance contributions originating in the immediate vicinity of the junction (Si-metal interface) from contributions originating at a poor thermal contact between package and heat sink. In keeping with calculations on simplified geometrical configurations, for which analytical solutions of the frequency dependent heat flow in a distributed circuit could be obtained, experimental results are presented which indicate that both heat flow resistance contributions can be extracted and separated with sufficient accuracy from as few as three electrical resistance measurements, e.g., at dc, 100 Hz, and 1 MHz. The simplicity of such measurements and their evaluation make this technique ideal for in-line testing of production devices.

Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 Diodes

Abstract: Nb–Nb2O5–metal diodes, after voltage breakdown, exhibit current-controlled negative resistance and switching between two stable conduction states. Before breakdown, Nb–Nb2O5–Au diodes are electroluminescent with hole injection occurring at the Nb2O5–Au interface. After breakdown, electroluminescence is closely related to switching. The energy of emitted radiation has maxima at 1.3 and 1.6 eV. Electroluminescence is both polarity- and voltage-dependent, indicating that hole injection, not heating, produces electroluminescence. Increased electroluminescence accompanies diode switching. Microscopic observation shows that bistable switching and dielectric breakdown of Nb–Nb2O5–Au diodes occur at small conducting regions in the oxide. Destructive dielectric breakdown in Nb–Nb2O5–Cu diodes differs from that in Nb–Nb2O5–Au diodes.

Efficient infrared‐to‐visible conversion by rare‐earth oxychlorides

Abstract: When pumped by radiation from a Si–GaAs diode, the luminous efficiency of Y3OCl7:Yb3+, Er3+ is comparable to that of visible emitting GaP diodes. By varying the Yb3+ concentration, phosphors have been made which produce a red or yellow visual response.

Optical semiconductor device with glass dome

Abstract: An optical semiconductor device including an electroluminescent diode mounted on a support so that radiation from the diode is emitted away from the support. A glass dome is mounted on the support and covers the diode so as to be in intimate contact with the diode. The radiation emitted from the diode passes through the glass dome so as to improve the external emission efficiency of the device. The optical semiconductor device is made by mounting the electroluminescent diode on a support and then forming a glass dome over the diode with the glass dome being in intimate contact with and fused to the diode. The glass dome may be formed by placing a preformed glass bead on a heated diode and support subassembly, or by melting a glass in a mold cavity and placing the diode and support subassembly onto the soft glass while in the mold.

Digital electromagnetic wave phase shifter comprising switchable reflectively terminated power-dividing means

Abstract: A digital phase shifter of the reflection type is disclosed which includes a directional coupler, hybrid network or other power division network with switchable load means coupled to ports of the coupler for effecting changes in reflection coefficients of the network to provide incremental phase shifts or delays in the output wave relative to the input wave. A fourport hybrid network is provided with switchable loads, such as diodes, at some of the ports, and the diodes are controlled by control signals. In one arrangement switchable loads are connected to three of the four ports to provide eight states of phase shift spaced 45* apart. Some other arrangements include more than one hybrid network to provide a greater number of incremental phase shifts.

CONTINUOUS OPERATION OF A YAIG: Nd LASER BY INJECTION LUMINESCENT PUMPING

Abstract: Continuous operation of a YA1G:Nd laser has been achieved using incoherent injection luminescent pumping. GaAsxP1−x light‐emitting diodes are used at liquid‐nitrogen temperatures to provide effective optical pumping of YA1G:Nd over a narrow wavelength range. Initial experiments give a continuous laser output of 40 mW at 1.0641 μm with 8‐W total electrical input power to the diodes.

Time‐Resolved Scanning Electron Microscopy and Its Application to Bulk‐Effect Oscillators

Abstract: The application of the scanning electron microscope to the examination of time‐varying phenomena is discussed. The limitations of response time are mentioned, and methods for increasing response speed are considered. These include the use of electrostatic deflection plates to chop the primary electron beam, the use of solid‐state semiconductor diodes as electron detectors, and the use of sampling and the storage and processing of data prior to display. Time‐resolved techniques are then applied to a study of the motion of domains of high electric field in CdS ultrasonic oscillator diodes and in GaAs Gunn effect diodes. In both photoconducting and semiconducting CdS, the domain formation and propagation is correlated to the current waveform of the oscillator. Nonuniform domain propagation in two dimensions is examined in a GaAs oscillator.

Deposited silicon diffusion sources

Abstract: Non-single crystal semiconductor material formed on a semiconductor substrate and separated from all but a portion of the substrate by an intervening insulation layer contains at least one dopant and preferably two dopants of opposite conductivity type. Heating the substrate, together with the overlying insulation and non-single crystal semiconductor layers, drives the dopants contained in the non-single crystal semiconductor material into the underlying semiconductor substrate in such a manner as to form diodes or transistors.

Microstrip phase shifter having switchable path lengths

Abstract: A microstrip phase shifter is inserted in a waveguide aperture, the phase shifting network consists of lightweight transmission line sections which can be switched by microwave diodes to provide the required phase shift. The diodes are switched in pairs, forward or back biased, so that the wave will traverse through a given path to complete the phase shifting according to the switched pair of the diodes.

A Multiple-Diode High-Average-Power Avalanche-Diode Oscillator (Correspondence)

Abstract: This correspondence presents a simple circuit which allows direct combining of the power obtainable from several avalanche diodes. The circuit does not require extremely close matching of dc or RF diode characteristics, and no particular isolating networks such as hybrid combiners are necessary. CW power output exceeding 4 watts at 7 GHz and 3 watts at 9 GHz has been demonstrated in a device employing five diodes. The number of diodes which can be combined using this technique is limited by geometric and heat sink considerations. Descriptions of typical single-diode and multiple-diode oscillators are given along with equivalent circuits. The circuits employ resistors or resistor networks to suppress low-frequency oscillations and undesired resonances which occur when several oscillators are coupled together. Negligible insertion loss is incurred at the design output frequency. Measured performance is given on similar single- and multiple-diode oscillators. Data include frequency, power, AM noise, FM noise, temperature, and loaded Q.

p-n junction—Schottky barrier hybrid diode

Abstract: A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and reverse electrical characteristics are in excellent agreement with simple theory, and that the excess noise normally found in passivated Schottky barrier diodes has been significantly reduced. The influence of metal barrier height and diffusion profile on the charge storage characteristics of these devices is discussed and examined experimentally.

Transport Properties of Metal-Silicon Schottky Barriers

Abstract: Schottky barrier diodes were fabricated by vacuum depositions of Au, Ag, and Cu onto chemically cleaned silicon surfaces and their current-voltage and capacitance-voltage characteristics were investigated in details over a temperature range between 100°K and 350°K. The current-voltage characteristics obtained are of nearly ideal Schottky barrier type and the current transport in the barriers is dominated by the thermionic emission and the image force effect. The temperature coefficient of the barrier height, the forward "n", and the image force dielectric constant were found to be (2.67±0.60)×10-4 eV/°K, 1.01~1.02, and 11.5e0 respectively. The departure from the ideal characteristics was explained by the generation-recombination current in the barrier region.

Low‐temperature high‐frequency capacitance measurements of deep‐and shallow‐level impurity center concentrations

Abstract: A simple method is proposed and demonstrated for the determination of a minute amount of deep‐level impurities in the transition region of p‐n junctions from the high‐frequency capacitance change when the junction temperature is lowered from room temperature to 77°K and the junction bias is switched to zero and back to the large reverse bias to set the charge trapped at these centers to the equilibrium value. Sensitivity of 1011 atoms/cm3 and 105 total atoms in the depletion layer is demonstrated in junction gettered by phosphorus glass. Examples are also given for Ni‐ and Audoped silicon diodes and transistors.