Showing papers on "Equivalent series resistance published in 1982"

Distributed series resistance effects in solar cells

Abstract: A mathematical treatment is presented of the effects of one-dimensional distributed series resistance in solar cells. A general perturbation theory is developed, including consistently the induced spatial variation of diode current density and leading to a first-order equivalent lumped resistance of one third the total sheet resistance. For the case of diode characteristics of exponential type and distributed resistance of arbitrary size, unified numerical results are presented for both illuminated and dark characteristics. At high forward dark currents, the distributed series resistance is shown to cause an effective doubling of the "diode quality factor."

Measurement of MOSFET constants

Abstract: A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.

Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET

Abstract: A semiconductor structure and particularly a high-speed VLSI self-aligned Schottky Metal Semi-Conductor Field Effect Transistor having a relatively high operating frequency and low series resistance, predicated upon very controllable small structure geometries made by the growth of oxide bumper insulators on either side of the schottky barrier. The oxide bumpers width is relatively thicker than the depth of the initial silicon dioxide layer on the substrate surface thereby providing effective separation of the gate from the source and drain respectively. Accordingly, spatial separations between the self-aligned gate-and-drain and gate-and-source can be relatively very closely controlled by varying the doping level of an intermediate polysilicon layer thereby providing controllable differential polysilicon oxidation rates for the bumpers. Thus, the series resistance can be controlled to be relatively low thereby providing a VLSI SASMESFET device that can be operated at relatively high speeds.

Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance

Abstract: A bipolar transistor having a first and second selective collector region extending from a buried high impurity region to the surface of the substrate. The first selective region defines the plane breakdown voltage to be equivalent to the planar breakdown voltage of the base-collector junction and the selective regions and the buried layer form a low series resistance collector.

High voltage insulator assemblage having specially-chosen series resistance

Abstract: The invention relates to an outdoor high voltage insulator, wherein the flashover due to the effect of external layers or deposits of pollution is prevented or at least shifted in the direction of higher degree of pollution. A resistance element (1) is connected in series with the insulator itself (2), with the leakage current prior to flashover producing a voltage drop over the resistance element (1). This voltage drop reduces the voltage on the insulator and prevents or retards flashover.

Analysis of Conversion Efficiency of Large Area a-Si: H Solar Cells

Abstract: The conversion efficiencies of 7.0, 5.5 and 4.7% have been obtained for ITO/n-i-p/SS a-Si: H solar cells with 1.2, 49.and 100 cm2 area under AM1 (100 mW/cm2) illumination, respectively. The short circuit current improvement by changing the cell structure from the ITO/p-i-n/SS to the ITO/n-i-p/SS is explained by the lower absorption coefficient of n-type windowside layer in the latter structure. The decrease of the fill factor with increasing cell area is mainly caused by the series resistance due to the ITO film and the grid electrodes and the contact resistance between the ITO film and the grid electrodes.

Series resistance associated with thick-film contacts to solar cells

Abstract: A high series resistnace is often associated with thick-film contacts on solar cells A study of the thick-film silver/silicon interface of a single-crystal silicon solar cell is presented Series and contact resistance measurements and scanning electron microscopy, in conjunction with hydrofluoric acid etching of cells, lead toward an understanding of the silver/silicon interface and of the barriers to current flow

The development of millimetre wave mixer diodes

Abstract: A new format gallium arsenide beam lead diode has been developed which allows the total capacitance to be reduced sufficiently for applications throughout the millimetre waveband. The design involves the use of low melting point glass and has high mechanical strength for ease of handling. Metal-organic chemical vapour deposition has been used to provide the thin epitaxial layer required to minimize series resistance in the device. Typical measurements from many batches are total capacitance at zero bias 003 pF, including 002 pF stray capacitance, series resistance 6Ω and breaking force 4.5 g. The millimetre wave performance of the diodes has been demonstrated in microstrip mixer circuits operating at 90 GHz and 140 GHz. The microstrip single-ended mixer at 140 GHz extends the technology already established up to 100 GHz and includes a single crystal quartz substrate. The conversion loss of balanced mixers at 90 GHz is typically 6.5 dB and the single-ended mixer at 140 GHz displayed a loss of 7.0 dB.

Surge arrester with a bypass gap

Abstract: A surge arrester includes two series-connected non-linear resistors (1, 2) composed mainly of zinc oxide. A linear resistor (R1, R2) is connected in parallel to at least one of the non-linear resistors (1, 2), and a bypass gap (3) is connected in parallel to one non-linear resistor (2). With an AC voltage applied to the series connection, each linear resistor (R1, R2) exhibits a resistance which is smaller than the equivalent resistance of the respective parallel non-linear resistor (1, 2).

Graphical method for the evaluation of series resistance in solar cells

Abstract: A graphical method for the evaluation of series resistance (R s) has been proposed after solving the dark and illuminated current-voltage equations for junction solar culls. The design of an electronic circuit has been described to obtain idea) open and short circuit condition? and the measurement of R s has been reported for a few diffused junction silicon solar cells as a function of illumination level up to∼2 gun. It has been found that the series resistance decrease sharply with intensity of incident radiations up to∼1 sun and it saturates with further increase of intensity

Current‐voltage response of tandem junction solar cells

Abstract: A model tandem junction solar cell is compared with experimental results from the monolithic n‐Si/SnO2/n‐CdSe/electrolyte tandem system and from its constituent cells, n‐Si/SnO2 and n‐CdSe/electrolyte. Inclusion of the effects of series resistance and partial shunting of one or both active junctions produces a model that adequately describes the experimental cell. Both the voltage addition principle and the expected response to the tandem cell to different wavelengths are confirmed. The implications for tandem junction solar cell development are discussed.

Tunnel injection type travelling time effect semiconductor device

Abstract: PURPOSE:To obtain the device operating at ultrahigh speed by forming an electrode for control to a tunnel injection type travelling time effect negative resistance element. CONSTITUTION:Carriers are tunnel-injected into an N layer 2 stacked onto a P source 1, and an N layer 3 is made travel. An N drain 6 is further stacked, and electrode 7, 8 are attached. The gate electrodes 5 are shaped through insulating films 4, and the distribution of potential of the layer 3 is controlled. The impurity concentration of the N layer 2 and the N layer 3 is increased when the space of the gates 5, 5 is shorter and the space of the source 1 and the drain 6 is shorter. The space of the gates is made approximately 2mum-1,000Angstrom , and the thickness of the layer 2 is thinned in an extent that tunnel injection is sufficiently generated. When the travelling time of the carriers can be ignored, the layer 3 shows negative resistance when the angle of travelling theta=pifW/v is selected in pi layer 1 and the N layer 6 are also thinned, and series resistance and thermal resistance are lowered. In this constitution, operating voltage is low because tunnel injection is used, oscillating frequency is high because an operating layer is thin, and the device generating small noises is obtained.

Measuring the Self-Resonant Frequency of Capacitors

Abstract: Methods of measuring the self-resonant frequency of capacitors are presented. Precautions and faults of the various techniques are discussed. The difficulty of measuring the self-resonant frequency (SRF) of a capacitor is greater than might be suspected. Of the several plausible techniques, none is without deficiencies.

Epitaxial type transistor and manufacture thereof

Abstract: PURPOSE:To lower loss voltage in a saturation region, by employing epitaxial type transistor structure which is capable of reducing series resistance applied toward collector side. CONSTITUTION:In a circumferential section of an N type high specific resistance epitaxial layer 2 consisting of a part of a collector region, a region 9 having an extremely low specific resistance and the same electric conduction type as the collector region (epitaxial layer) is formed in the position kept away from outside surface of a P type base region by a distance l equal to thickness of an epitaxial layer 8. And, when impurities contained in the region 9 and a silicon substrate 1 are cut away by high temperature of laser, redispersion takes place to form along surface of the laser cut groove a layer 11 whose resistance is extremely low.

Resistance component measuring circuit

Abstract: PURPOSE:To measure the resistance component added in series to a P-N junction element by operating a sample like pulses, and at the same time constituting a high frequency AM modulating circuit synchronized with this, and incorporating the differentiating resistance for sample to said element. CONSTITUTION:A high frequency signal is not amplified by FETs 7, 16 when there is no output from a pulse generator 21, and since no electric current flows to a sample 25 during this period, measurement errors by temp. can be reduced. When a pulse output is generated from the pulse generator 21, the electric current inversely proportional to the combined resistance value of the 1st series resistance value of a bias resistance 26 and the sample 25 and the 2nd series resistance value of a variable resistance 12 and a bias resistance 27 flows. If the resistances 26, 27 are assumed to be of the same values, ther is no compared output of a comparator 22 only when the resistance component of the sample 25 and the resistance value of the variable resistance 12 are equal. In this way, the resistance component of a P-N junction element is measured quickly without receiving thermal changes.

First-order modeling of oxide-isolated ISL

Abstract: A model is derived for an oxide-isolated ISL gate with 3-µm minimum details and fan-out = 4. The model includes an n-p-n transistor, a p-n-p transistor, a silicon diode, and four Schottky-barrier diodes. Special attention is paid to all temperature coefficients of the device parameters. Very good agreement is obtained with measurements in the temperature range from 25 to 125°C. Due to the p+channel-stopper in the process, the collector series resistance of the clamp p-n-p is relatively small.

Switching dc power supply

Abstract: PURPOSE:To obtain an output with low noise level, by combining a distributed capacity element with low loss and a plurality of electrolytic capacitors after rectifying an AC output generated at the secondary side of a transformer. CONSTITUTION:A pulse output produced at the secondary side of a transformer 15 is rectified 171 and 172 and applied to a smoothing circuit via a choke coil 18. This smoothing circuit consists of a distributed capacity element 21 having, e.g., power supply terminals 191-192...195, and at least ground terminals 201 and 202, and electrolytic capacitors 221, 222...225 connected to a power supply element 21. The smoothed DC output through the element 21 is obtained at terminals 231 and 232. Thus, over a broad frequency band ranging from a low frequency to several tens of MHz, a very low noise level can be obtained from an equivalent series resistance.

Projecting circuit for photoelectric switch

Abstract: PURPOSE:To set a projection period and wide pulse width freely by connecting a resistance in series to a capacitor connected between the base of the 1st transistor (TR) and the collector of the 2nd TR. CONSTITUTION:A resistance 5 is connected in series to a capacitor 10 connected between the base of a TR1 and the collector of a TR2. When the base-emitter voltage of the TR1 becomes a forward bias, the TRs 1 and 2 enter conduction states. As the TRs 1 and 2 turn on completely, they are saturated to turn on a light emission diode 3 sufficiently. The capacitor 10 is charged through the series circuit of the base-emitter equivalent rasistance of the TR1 and a resistance 5 and discharged through a resistance 8, a DC power source, a resistance 4, a diode 3, and the resistance 5. A projection period is nearly determined by the capacitor 10 and resistance 8, and a pulse width is determined by the capacitor 10, the resistance 5, and the emitter-base equivalent resistance of the TR1.

Measuring circuit for operation time of electromagnetic relay

Abstract: PURPOSE:To obtain an operation-time measuring circuit for an electromagnetic relay having high operation-time measurement precision, by achieving constant-voltage drive securing the property of a constant current. CONSTITUTION:A relay coil A is connected to a variable constant-voltage source (e) together with a series resistance R and a feedback resistance (r). This feedback resistance (r) has a value much smaller enough not to influence measurement precision than the total resistance of a driving circuit of the relay coil resistance, series resistance R, etc. Between the feedback resistance (r) and variable constant- voltage source (e), an amplifier G is connected to detect the variations of the saturation value I of a driving current for the feedback resistance (r), and feedback to the variable constant-voltage source (e) is provided to keep the constant value of the I. The influence of the temperature rises of the relay coil resistance, series resistance, etc., owing to multiple measurement is extremely small with the time- constant variations DELTAt' of the driving circuit, and is disregarded. Thus, a constant voltage drive waveform securing the property of a constant current is obtained and the effect to the improvement of measurement precision is extremely large.

PERFORMANCE OF A MICROWAVE AMPLITUDE LIMITER USING GaAs MESFET.

Abstract: This paper explains the input/output power and AM-PM conversion characteristics of an amplitude limiter using GaAs MESFET. It is also pointed out that the AM-PM conversion can be minimized conveniently by adding inductance in parallel to the gate terminal. In this paper the FET equivalent circuit is used for a calculation from which the relationship between the AM-PM conversion and the gate series resistance, driving source impedance and the added inductance is clarified; the design method for minimizing AM-PM conversion is established. The measured charactersitics are found to be the same as predicted by theory, and the correctness of the analysis is confirmed.

Field-effect transistor device

Abstract: PURPOSE:To obtain the FET, the leakage currents of a gate thereof are small and characteristics thereof are not deteriorated, by making a drain region thinner than a source region. CONSTITUTION:A gate electrode 11 is formed on a gate region of a dug-in section of a GaAs active layer 12, and an upper section of the source region is coated selectively with an ohmic AuGe/Ni electrode 10. The surface is coated selectively with a resist 13, the active layer 12 is etched and an ohmic AuGe/Ni electrode 14 is attached similarly. The thickness of the layer 12 just under the electrode 10 is made approximately 0.4-1mum and one just under the electrode 14 approximately 0.3- 0.8mum, and series resistance is made small between the source and the gate and large between the gate and the drain respectively. When the difference of the amount of the digging-in of the drain region and the gate region is made 0.2mum or more, the concentration of an electric field at an end of the electrode 14 can be relaxed, and pressure resistance is improved. According to this constitution, the leakage currents of the gate are decreased, high output is obtained and characteristics are not deteriorated because the series resistance between the source and the gate is small.

D.c. power supplies

Abstract: The drawing shows the circuit diagram of a DC power supply operated from an AC current source The source is connected to a full-wave rectifier comprising diodes D3, D4, D5, D6 through isolation capacitors C11, C12 and the DC output is smoothed by the filler circuit comprising resistor Rf and capacitor Cf The output terminal 19 of the rectifier is coupled back through the half-wave rectifier comprising diodes D1 D2 to the input terminals of the capacitors C11, C12 The current return diodes D1, D2 prevent a voltage potential reversal across the capacitors C11, C12 and enable polarized capacitors to be used The use of more efficient polarized (DC) capacitors as the AC isolation element, provides surge limiting protection and larger currents at reduced costs