Showing papers on "IMPATT diode published in 1988"
25 May 1988
TL;DR: In this paper, a monolithic IMPATT fabrication technique was developed to integrate active devices and radiating elements on the same surface of a semi-insulating GaAs substrate, and the oscillator was automatically matched to the antenna properties, eliminating antenna feed mismatch losses.
Abstract: A monolithic IMPATT fabrication technique was developed to integrate active devices and radiating elements on the same surface of a semi-insulating GaAs substrate. Since the IMPATT diode resonator also acted as the radiating element, the oscillator was automatically matched to the antenna properties, eliminating antenna feed mismatch losses. Devices operating at 43.3 GHz produced 26 mW CW output power with 7.1% conversion efficiency. The oscillation frequency and the radiation patterns were determined by the properties of the on-chip circuitry. This monolithic oscillator was also coupled to waveguide using several configurations. Low-cost oscillator fabrication was demonstrated; linear arrays of such radiating elements were produced and radiation patterns were determined as a function of interelement spacings and element numbers. >
41 citations
TL;DR: In this paper, a single-chip millimeter-wave transmitter module in which GaAs IMPATT diodes are monolithically integrated with a microstrip resonator and a loop antenna is discussed.
Abstract: A single-chip millimeter-wave transmitter module in which GaAs IMPATT diodes are monolithically integrated with a microstrip resonator and a loop antenna is discussed. Devices operating at 43.3 GHz produce 27-mW CW output power with 7.2% conversion efficiency. Radiation patterns of linear arrays of such radiating elements were determined as a function of interelement spacing and number of elements. The oscillator chip was also directly coupled to and power combined in waveguides, producing an inexpensive millimeter-wave source. >
33 citations
TL;DR: In this article, numerical simulations were performed to study the typical power generating capabilities of SiC impact avalanche transit time (IMPATT) diodes utilizing the recent experimental data available.
Abstract: Silicon carbide (SiC), due to its thermal and electronic properties, has long been considered an excellent device material for microwave and millimeter‐wave power generation. Numerical simulations were performed to study the typical power generating capabilities of SiC impact avalanche transit‐time (IMPATT) diodes utilizing the recent experimental data available. Operating characteristics of double‐drift IMPATT devices at 10, 35, 60 and 94 GHz are compared. Both pulsed mode and continuous‐wave (cw) mode operation are studied. Finally, a comparison among SiC, Si, and GaAs double‐drift IMPATT devices is made at various frequencies. It is shown that, for the pulsed mode of operation, SiC double‐drift IMPATT devices can produce significantly higher powers than Si and GaAs devices at comparable frequencies. In the cw mode of operation, SiC devices can produce significantly more power than GaAs devices at all frequencies. However, a comparison at 94 GHz indicates that SiC IMPATT diodes in the cw mode of operati...
29 citations
Patent•
02 Jun 1988
TL;DR: A semiconductor body consists of at least one semiconductor device, in particular an IMPATT diode, with integrated heat sink as mentioned in this paper, which simultaneously functions as an etch-resist layer, a contact layer and a buffer layer.
Abstract: A semiconductor body consists of at least one semiconductor device (12), in particular an IMPATT diode, with integrated heat sink (9). The semiconductor layer sequence from which the semiconductor device is produced consists of a first p -doped semiconductor layer (2) which simultaneously functions as an etch-resist layer, a contact layer and a buffer layer. … …
16 citations
TL;DR: In this paper, a planar IMPATT diodes were fabricated for W-band operation on high-resistivity silicon substrates, and the active layers were grown by silicon molecular beam epitaxy.
Abstract: Planar IMPATT diodes have been fabricated for W-band operation on high-resistivity silicon substrates. The active layers are grown by silicon molecular beam epitaxy. The diodes are monolithically integrated in a coplanar disc resonator. Good DC characteristics have been achieved. Oscillations have been detected at a frequency of 76 GHz with a continuous wave output power of about 1 mW.
15 citations
24 May 1988
TL;DR: In this article, a monolithic microwave integrated circuit (MMIC) design was developed for GaAs IMPATT diodes to enable their operation under continuous-wave (CW) conditions at V-band frequencies.
Abstract: A monolithic microwave integrated circuit (MMIC) design was developed for GaAs IMPATT diodes to enable their operation under continuous-wave (CW) conditions at V-band frequencies. All impedance-matching circuits were fabricated on the top surface of the GaAs substrate. At 61.5 GHz, 100-mW CW output power was obtained with 13.5% conversion efficiency. In an alternative design, varactor diodes were integrated with the IMPATT circuits to produce the first monolithic VCOs operating under CW conditions. Over 3.5 GHz of tuning bandwidth was obtained at a center frequency of 70-GHz with a CW output power of 15 mW. >
10 citations
11 Nov 1988
TL;DR: By combining the advanced methods of silicon molecular beam epitaxy (Si-MBE) and X-ray lithography, a technology for the fabrication of monolithic integrated millimeter wave circuits on high resistivity Si was developed.
Abstract: By combining the advanced methods of silicon molecular beam epitaxy (Si-MBE) and X-ray lithography, a technology for the fabrication of monolithic integrated millimeter wave circuits on high resistivity Si was developed. With these techniques simple millimeter wave transmitter and receiver circuits have been fabricated. The receiver chip with a coplanar Schottky diode as detector element and a microstrip antenna with 36 radiating elements shows a sensitivity of 65 mu V/ mu W/cm/sup 2/. The transmitter oscillator with a double drift IMPATT diode made by Si-MBE emits maximum CW output power of 200 mW at 73 GHz. >
9 citations
TL;DR: In this article, a planar oscillator on highly insulating silicon substrate with a disc resonator was fabricated, and the active element was an IMPATT diode made from SI MBE material.
Abstract: Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.
8 citations
Patent•
13 Dec 1988TL;DR: In this paper, an Impatt diode (17) of a diode switch (16) produces directly at microwave frequency a synchronizing signal of the oscillator (pulses modulated in accordance with negative frequency slopes).
Abstract: A radar device, of the almost linearly frequency-modulated type of the transmission signal during the pulse, comprises a transmit circuit including a high-frequency oscillator (29), a transmit-receive aerial (7) and a receive circuit including a pulse compression element (33). According to the invention, inside the transmit circuit, an Impatt diode (17) of a diode switch (16) produces directly at microwave frequency a synchronizing signal of the oscillator (pulses modulated in accordance with negative frequency slopes). For this purpose, a clock pulse generator (26) commands a switch (25) arranged in series on the conductor (19) of the supply current of the Impatt diode (17) which current is substantially continuous, to conduct for the duration of each pulse to be transmitted.
6 citations
TL;DR: Chloride transport vapor phase epitaxy has been one of the most widely used techniques for the epitaxial growth of GaAs for microwave device applications as discussed by the authors. Unfortunately, this technique has been limited to the growth of relatively low frequency (
5 citations
TL;DR: In this paper, the effects of neutron irradiation on the electrical properties of the silicon devices (IMPATT diode and solar cell) have been studied in detail, and it was shown that a neutron fluence of 8.45 × 1015 neutrons/cm2 was found to cause permanent damage on the silicon IMPATT, leading to a pronounced increase in the reverse saturation current and reverse avalanche breakdown voltage, as well as to a change in the I-V-relationship.
Abstract: Neutron irradiation effects on the electrical properties of the silicon devices (IMPATT diode and solar cell) have been studied in detail. A neutron fluence of 8.45 × 1015 neutrons/cm2 was found to cause a permanent damage on the silicon IMPATT diode leading to a pronounced increase in the reverse saturation current and reverse avalanche breakdown voltage, as well as to a change in the I-V-relationship. In addition, the temperature coefficient of the device breakdown voltage becomes negative. Under the same neutron fluence exposure, silicon solar cell looses most of its output characteristics. Increasing the neutron fluence up to 1.872 × 1018 neutrons/cm2, both devices loose their characteristic features as rectifying de,ices and behave as linear restistances Neutron activation of the elemental constitution of the devices implies the possibility of transforming them to a radioactive sources.
25 May 1988
TL;DR: In this paper, the integration of a GaAs IMPATT oscillator and a varactor diode on a single chip was reported. But the performance of the system was limited to 100 to 400 mW.
Abstract: Integration of a GaAs IMPATT oscillator and a varactor diode on a single chip is reported. The IMPATT oscillator was in the form of a half-wavelength microstrip resonator excited on both ends symmetrically by a pair of diodes. A third diode was placed close to one end of the resonator and used to control the oscillation frequency of the oscillator through a coupling capacitor. Depending on the value of the coupling capacitor, tuning ranges of up to 1.5 GHz could be obtained at a center frequency of 55 GHz. Typical output powers were in the 100 to 400 mW range. >
Patent•
27 May 1988
TL;DR: In this paper, the active silicon layers of the IMPATT diode are grown onto a silicon substrate and the first silicon layer has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed.
Abstract: A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.
25 May 1988
TL;DR: In this article, the design, configuration, and performance of a W-band transceiver with a volume of 1 in/sup 3/ is discussed, and the transceiver uses a non-coherent chirped waveform for a pulse compression radar application.
Abstract: The design, configuration, and performance of a W-band transceiver with a volume of 1 in/sup 3/ is discussed. The transceiver uses a noncoherent chirped waveform for a pulse compression radar application. The authors also discuss a design technique for the local oscillator (LO) of the radar, and the successful demonstration of a Gunn diode LO validating this design procedure. The technique of preheat bias control was demonstrated as a method to compensate the chirp response of IMPATT diode transmitters for ambient temperature variations. >
11 Nov 1988
TL;DR: In this article, the double drift IMPATT diode layers are deposited over a patterned SiO/sub 2/ film, and the poly-Si and top contact are covered with an Au metallisation so that the diode can be matched to a disc resonator in order to make the whole structure act as an oscillator.
Abstract: Despite considerable research effort on three terminal devices, there is currently no possibility of replacing IMPATT diodes if powerful oscillator operation in the MM-wave range is required. The development of monolithically integrated silicon IMPATT oscillators is a logical development if the difficulties and frequently unreproducible impedance matching of discrete IMPATTs for waveguide operation are considered. In the fabrication approach, the IMPATT structure is embedded in semiinsulating polycrystalline Si. This poly-Si can be deposited simultaneously with the mono-Si layers necessary for device operation during the so-called 'differential epitaxy'. A favourable method for this differential epitaxy of silicon is molecular beam epitaxy (MBE). For this concept highly doped n/sup +/-substrates are used. The double drift IMPATT diode layers are deposited over a patterned SiO/sub 2/ film. A three layer mono-Si zone embedded in poly-Si results. Metallic contacts are evaporated and the p/sup +/-poly-Si layer is removed because of its poor isolation. The poly-Si and top contact are covered with an Au metallisation so that the diode can be matched to a disc resonator in order to make the whole structure act as an oscillator.
24 May 1988
TL;DR: In this paper, a monolithic voltage-controlled oscillator (VCO) was constructed using a GaAs double-drift Read IMPATT diode as the active element and a similar diode biased below breakdown as the varactor.
Abstract: A monolithic voltage-controlled oscillator (VCO) is described that was constructed using a GaAs double-drift Read IMPATT diode as the active element and a similar diode biased below breakdown as the varactor. The chip produced 120-mW peak power over an electronically controlled tuning range between 47 to 48 GHz. A computer analysis based on characterized circuit parameters was used to predict the performance of the chip. The key limiting factor in the power and tuning is the presence of large parasitic series resistance in the varactor. By utilizing a single-drift doping profile, improved performance can be expected. >
TL;DR: In this paper, a small-signal field analysis of a distributed IMPATT diode is presented, where the active region is assumed to consist of a uniform avalanche layer and avalanche-free drift layers.
Abstract: A small-signal field analysis of a distributed IMPATT diode is presented. The active region of the diode is assumed to consist of a uniform avalanche layer and avalanche-free drift layers. The propagation constant and field distributions are obtained without numerical solution of differential equations. The effects of losses caused by the presence of inactive layers are included in the analysis. Numerical examples of GaAs double-Read distributed IMPATT diodes are given which show the dependence of the amplification characteristics on the thicknesses of the avalanche and drift layers. >
Patent•
19 Oct 1988TL;DR: A microwave diode tuning circuit including an IMPATT diode holder of coaxial form and an adjustable capacitor connected in a parallel resonant circuit by microstrip transmission line is described in this paper.
Abstract: A microwave diode tuning circuit including an IMPATT diode holder of coaxial form and an adjustable capacitor connected in a parallel resonant circuit by microstrip transmission line. The tuning circuit includes a stabilization network and a bias insertion network. Optionally, the tuning circuit may include a hybrid junction for coupling two such diode tuning circuits together. The diode holder includes an internally-externally threaded sleeve providing means for continuously adjusting, through a limited range, the inductance of the resonant circuit.
TL;DR: The thermal resistivity of GaAs IMPATT diodes was measured from 100-325 degrees C and showed an unexpected 10% decrease as mentioned in this paper, in contrast with the behavior of MESFET devices, whose resistivity increases as much as 30% over the same temperature range.
Abstract: The thermal resistivity of GaAs IMPATT diodes was measured from 100-325 degrees C and showed an unexpected 10% decrease, in contrast with the behavior of GaAs MESFET devices, whose resistivity increases as much as 30% over the same temperature range. The most likely explanation of this unusual effect is the dominance of charged impurity scattering in a degenerately doped GaAs contact layer. This may be expected to occur in other devices where heat flow crosses highly doped regions. >
01 Jan 1988
TL;DR: In this article, the authors compare les predictives calculees au moyen d'un modele theorique a celles experimentales, obtenues avec un oscillateur IMPATT a onde continue fonctionnant dans la bande comprising entre 130 GHz and 150 GHz.
Abstract: Dans cet article, on compare les donnees predictives calculees au moyen d'un modele theorique a celles experimentales, obtenues avec un oscillateur IMPATT a onde continue fonctionnant dans la bande comprise entre 130 GHz et 150 GHz. La structure de cet oscillateur est constituee d'une diode IMPATT avec une tete resonnante de forme cylindrique
12 Feb 1988
TL;DR: In this paper, the authors report on some of the experimental techniques used and results achieved during development work on W-band pulsed IMPATT oscillators, which were based on a modular waveguide cavity allowing for ease of construction and interchangeability.
Abstract: The author reports on some of the experimental techniques used and results achieved during development work on W-band pulsed IMPATT oscillators. The particular application of these sources was to form an injection locked amplifier chain as part of a frequency agile data gathering radar. The oscillators were based on a modular waveguide cavity allowing for ease of construction and interchangeability. Diodes were silicon double-drift devices and were nominally centred on 94 GHz with various output powers between 1 W and 10 W.
Patent•
19 Dec 1988TL;DR: In this paper, the radar is of the type with quasi-linear frequency modulation of the signal transmitted during the pulse, and a clock generator controls the conduction, for each pulse to be transmitted, through a switch (25) connected in series in the conducting line supplying an essentially constant current to the IMPATT diode (17).
Abstract: The radar is of the type with quasi-linear frequency modulation of the signal transmitted during the pulse. It comprises a transmitting circuit with a high frequency oscillator (29), a transmitting- receiving aerial (7) and a receiving circuit with a pulse compression system (33). An IMPATT diode (17) of a one-diode adder (16) in the transmission circuit directly creates a microwave synchronisation signal for the oscillator (pulses modulated according to negative frequency ramps). To achieve this, a clock generator (26) controls the conduction, for each pulse to be transmitted, through a switch (25) connected in series in the conducting line (19) supplying an essentially constant current to the IMPATT diode (17). Application in cartography or meteorology.
07 Jun 1988
TL;DR: The authors describe a self-consistent modeling of millimeter-wave diodes (GUNN, IMPATT, and p-i-n) for applications such as power sources or limiters to achieve reliable high-power operation.
Abstract: The authors describe a self-consistent modeling of millimeter-wave diodes (GUNN, IMPATT, and p-i-n) for applications such as power sources or limiters. Particular emphasis is placed on temperature rise within the devices to achieve reliable high-power operation. Circuit loading is also considered for a more realistic description of the operating mode. The proposed CAD (computer-aided design) technique has proved to be an efficient tool leading to the design and realization of high-power high-efficiency W-band sources operating at safe temperature rise. >